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Motorola Inc |
RF Power Field Effect Transistors • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters G • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 |
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Motorola Inc |
RF POWER FIELD EFFECT TRANSISTOR STYLE 1 NI –650 MAXIMUM RATINGS Rating Drain –Source Voltage Gate –Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 70 – 0.5, +15 302 1.72 – |
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Motorola Inc |
RF Power Field Effect Transistors • Integrated ESD Protection • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters G • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 |
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Motorola Inc |
RF POWER FIELD EFFECT TRANSISTORS igh Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power • Excellent Thermal Stability • Characterized with S |
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Motorola Inc |
RF POWER FIELD EFFECT TRANSISTORS igh Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power • Excellent Thermal Stability • Characterized with S |
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Motorola Inc |
RF Power Field Effect Transistor Array uivalent Large - Signal Impedance Parameters • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. Freescale Semiconductor, Inc... CASE 978 - 03 PLASTIC PFP - 16 PIN CONNECTIONS N.C. N.C. GATE1 N.C. GATE2 N.C. GATE3 N.C. 1 2 3 4 5 6 |
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Desde 2024. D4U Semiconductor.
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