| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Motorola Inc |
High Current Transistors age (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 5.0 — — — — — — — — 100 Vdc Vdc Vdc nAdc ON CHARACTERISTICS* DC Current Gain (I |
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Motorola Inc |
High Voltage Transistors r – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –80 Vdc, IE = 0) ON CHARACTERISTICS* V(BR)CEO V(BR)CBO V(BR)EBO ICBO DC Current Gain (IC = –2.0 mA, VCE = –5.0 V) BC450 BC450A (IC = –10 mA, VCE = –5.0 V) BC450 |
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Motorola Inc |
High Current Transistors – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –60 Vdc, IE = 0) ON CHARACTERISTICS* V(BR)CEO V(BR)CBO V(BR)EBO ICBO DC Current Gain (IC = –10 mAdc, VCE = –2.0 Vdc) (IC = –100 mAdc, VCE = –2.0 Vdc) (IC = –1.0 Adc, V |
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Motorola Inc |
High Current Transistors – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –60 Vdc, IE = 0) ON CHARACTERISTICS* V(BR)CEO V(BR)CBO V(BR)EBO ICBO DC Current Gain (IC = –10 mAdc, VCE = –2.0 Vdc) (IC = –100 mAdc, VCE = –2.0 Vdc) (IC = –1.0 Adc, V |
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Motorola Inc |
High Voltage Transistors r – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –80 Vdc, IE = 0) ON CHARACTERISTICS* V(BR)CEO V(BR)CBO V(BR)EBO ICBO DC Current Gain (IC = –2.0 mA, VCE = –5.0 V) BC450 BC450A (IC = –10 mA, VCE = –5.0 V) BC450 |
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Desde 2024. D4U Semiconductor.
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