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Mostech |
P-Channel Enhancement Mode Field Effect Transistor te-Body Leakage ON CHARACTERISTICS b Gate Threshold Voltage S ymbol BVDSS IDSS IGSS V G S (th) Drain-S ource On-S tate R esistance R DS(ON) On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS Input Capacitance |
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Desde 2024. D4U Semiconductor.
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