Mitsubishi PM5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	PM50RLA060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
2	PM50RSA060	Mitsubishi Electric Semiconductor	Intelligent Power Module ٗ Complete Output Power Circuit ٗ Gate Drive Circuit ٗ Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage VWPC WP WFO VUPC UP UFO GND GND VVPC VP VFO VWPI OUT V CC OUT V CC OUT V CC OUT V CC OUT V CC OUT V C
3	PM50RLA120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
4	PM50CLA060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
5	PM50CSE060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 600V Current-sens
6	PM50CSE120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. • 3φ 50A, 1200V Current-sense IGBT for 15kHz switching • Monol
7	PM50RSD120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. b) Using new Diode which is designed to get soft reverse recovery characteristics. c) Keeping the package compatibility. The layout/position of b
8	PM50RL1A060	Mitsubishi	INTELLIGENT POWER MODULES Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip sur- face temperature of CSTBTTM is adopted. c) Error output signal is possible from all each pro
9	PM50CL1A060	Mitsubishi	INTELLIGENT POWER MODULES Inverter + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip sur- face temperature of CSTBTTM is adopted. c) Error output signal is possible from all each protection
10	PM50B4LA060	Mitsubishi	INTELLIGENT POWER MODULES a) Adopting new 5th generation IGBT (CSTBTTM) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBTTM chips and error output is possible
11	PM50CTK060	Mitsubishi Electric Semiconductor	Intelligent Power Module LATED PACKAGE EQUIVALENT CIRCUIT DIAGRAM WP VWP1 VP VVP1 UP VUP1 VWPC NC VVPC NC VUPC NC 9 11 10 12 5 7 6 8 1 3 2 4 FO NC 19 15 Rfo VNC WN 13 18 VN1 14 VN 17 UN 16 GND In FO VCC TEMP GND Si Out Th GND In FO VCC GND In FO VCC GND In VCC GN
12	PM52AUBW060	Mitsubishi Electric	Intelligent Power Module ondenser Input Type Invertor use. Fig.1 PACKAGE OUTLINES 73±1 57±1 2.54 2.54 2.54 5.08 5.08 5.08 45.72±0.5 (9.64) 21 20 21 19 18 2-φ4.5 w 1 w 1 w 16 17 2 15 t a .D 9-2.54 6 14 12 10 8 6 13 11 9 7 S a 53 e h 0.6 2.5 U 4 t e .c m o 16-0.
13	PM50CLB060	Mitsubishi Electric	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
14	PM50RHA120	Mitsubishi Electric Semiconductor	Intelligent Power Module
15	PM50RSK060	Mitsubishi Electric Semiconductor	Intelligent Power Module ٗ Complete Output Power Circuit ٗ Gate Drive Circuit ٗ Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage FO BR V CC V CC V CC V CC V CC V CC GND GND GND GND GND GND GND GND GND GND GND GND GND GND OUT
16	PM50RLB120	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
17	PM50RLB060	Mitsubishi Electric Semiconductor	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos
18	PM50RL1B060	Mitsubishi	INTELLIGENT POWER MODULES Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip sur- face temperature of CSTBTTM is adopted. c) Error output signal is possible from all each pro
19	PM50RL1C060	Mitsubishi	INTELLIGENT POWER MODULES Inverter + Brake + Drive & Protection IC a) Adopting new 5th generation Full-Gate CSTBTTM chip b) The over-temperature protection which detects the chip sur- face temperature of CSTBTTM is adopted. c) Error output signal is possible from all each pro
20	PM50CLB120	Mitsubishi Electric	Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos