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Mitsubishi |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER • Memory capacity ..................................M30623M4T-XXXGP : ROM 32K bytes, RAM 3K bytes M30622M8T/M8V-XXXFP,M30623M8T/M8V-XXXGP : ROM 64K bytes, RAM 4K bytes M30622MCT/MCV-XXXFP,M30623MCT/MCV-XXXGP : ROM 128K bytes, RAM 5K bytes M30622ECT/E |
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Mitsubishi |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER • Memory capacity .................................. ROM (See Figure 1.1.4. ROM Expansion) RAM 10K to 20K bytes • Shortest instruction execution time ...... 100ns (f(XIN)=10MHZ, VCC=2.7V to 3.6V) 142.9ns (f(XIN)=7MHZ, VCC=2.2V to 3.6V with software o |
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Mitsubishi |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER • Memory capacity .................................. ROM (See Figure 1.1.4. ROM Expansion) RAM 3K to 20K bytes • Shortest instruction execution time ...... 62.5ns (f(XIN)=16MHZ, VCC=5V) 100ns (f(XIN)=10MHZ, VCC=3V, with software one-wait) : Mask ROM, |
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Mitsubishi |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER • Memory capacity .................................. ROM (See Figure 1.1.4. ROM Expansion) RAM 3K to 20K bytes • Shortest instruction execution time ...... 62.5ns (f(XIN)=16MHZ, VCC=5V) 100ns (f(XIN)=10MHZ, VCC=3V, with software one-wait) : Mask ROM, |
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Mitsubishi |
Transistor Module |
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Mitsubishi Electric Semiconductor |
TRANSISTOR MODULE verse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE nction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 6 |
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Mitsubishi Electric Semiconductor |
MEDIUM POWER SWITCHING USE INSULATED TYPE age Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, |
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Mitsubishi |
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER |
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Mitsubishi |
TRANSISTOR MODULES |
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Mitsubishi |
Transistor |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE e voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE lector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE ward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (ha |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE on Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode cur |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE on Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25°C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode cur |
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Mitsubishi Electric Semiconductor |
Transistor Module voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mou |
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Mitsubishi Electric Semiconductor |
Transistor Module voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Moun |
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Desde 2024. D4U Semiconductor.
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