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Mitsubishi Electric Semiconductor |
HIGH-SPEED SWITCHING USE 50 0.07 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Nch POWER MOSFET FY5ACH-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td |
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Mitsubishi |
Nch POWER MOSFET |
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Mitsubishi |
Nch/Pch POWER MOSFET ure Weight VGS = 0V VDS = 0V L = 10µH Typical value Conditions Ratings n-ch p-ch 30 –30 ±20 ±20 5 –4 35 –28 5 –4 1.5 –1.5 6.0 –6.0 1.6 1.7 –55~+150 –55~+150 0.07 Unit V V A A A A A W °C °C g Aug. 1999 PRELIMINARYNSootmicee:pTahriasmisetnroict l |
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Desde 2024. D4U Semiconductor.
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