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Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
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Mitsubishi Electric Semiconductor |
2SC1972 |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
2SC2630 |
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Mitsubishi Electric Semiconductor |
Triac al purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg |
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Mitsubishi Electric Semiconductor |
2SC2053 |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module 7 1 14.4 ±0.5 .6 R1 2- QR Code 3 MIN Type name Lot No. 0.8 HEAT SINK SIDE 18 0.28 2.54 ±0.2 14×2.54 (=35.56) 0.5 0.5 0.5 25 8-0.6 4-C1.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. NC VUFB VV |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module 7 1 14.4 ±0.5 .6 R1 2- QR Code 3 MIN Type name Lot No. 0.8 HEAT SINK SIDE 18 0.28 2.54 ±0.2 14×2.54 (=35.56) 0.5 0.5 0.5 25 8-0.6 4-C1.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. NC VUFB VV |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module ns in mm B TERMINAL CODE 3.5 0.28 1.778 ±0.2 16-0.5 1.5 ±0.05 17 1 14.4 ±0.5 .6 R1 2- QR Code 3 MIN Type name Lot No. 0.8 HEAT SINK SIDE 18 0.28 2.54 ±0.2 14×2.54 (=35.56) 0.5 0.5 0.5 25 8-0.6 4-C1.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is pos |
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Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
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Mitsubishi Electric Semiconductor |
Hi-Fi 7-Element Graphic Equalizer IC |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module sions in mm B 0.4 3.5 1.5 ±0.05 TERMINAL CODE 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NW NV NU W V U P NC 0.28 1.778 ±0.2 17 |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. (VNC) VUFB VVFB VWFB UP VP WP VP1 VNC * UN VN WN VN1 FO CIN VNC * NC NW NV NU W V U P NC 0.28 1.778 ±0.2 17 14.4 ±0.5 (3.5) 33.7 ±0.5 18.9 ±0.5 14.4 ±0.5 2- R1 .6 QR Code |
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Mitsubishi Electric Semiconductor |
Intelligent Power Module 0.5 .6 R1 2- QR Code 3 MIN Type name Lot No. 0.8 HEAT SINK SIDE 18 0.28 2.54 ±0.2 14×2.54 (=35.56) 0.5 0.5 0.5 25 8-0.6 4-C1.2 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. NC VUFB VVFB VWFB UP V |
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Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor High power and High Gain: Pout>15 W, Gp>14 dB @Vds=12.5 V,f=175 MHz High Efficiency: 60 % (typ) on VHF Band Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 12.3MIN 1.2+/-0.4 |
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Mitsubishi Electric Semiconductor |
DSP ●Car radio, radio cassette, wireless, new media. from electrostatic discharge in a CRT display or monitor TV. (Except DSP-141N) ●Protection against electrostatic discharge. ●Protection ■ Part number system DSP Series – 301 (Vs） DC Spark-over vo |
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Mitsubishi Electric Semiconductor |
Silicon RF Power Modules • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) • Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 136-174MHz • Low-Power Control Current IGG=1mA (typ) at VGG= |
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Mitsubishi Electric Semiconductor |
NPN Transistor |
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Mitsubishi Electric Semiconductor |
NPN Transistor |
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Desde 2024. D4U Semiconductor.
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