Mitsubishi Electric RA6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	RA60H1317M	Mitsubishi Electric	Silicon RF Power Modules • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear o
2	RA60H4047M1	Mitsubishi Electric	RF MOSFET MODULE
3	RA60H4452M1	Mitsubishi Electric	Silicon RF Power Modules • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 440-520MHz • Metal shield structure that makes the improvements of spurious www.DataSheet4U.com radiation