Mitsubishi Electric M58 Hoja de datos

No.	parte #	Fabricante	Descripción
1	M58990P-1	Mitsubishi Electric	CMOS 8-Bit 8-Channel A/D Converter
2	M58655P	Mitsubishi Electric Semiconductor	1024-BIT ELECTRICALLY ALTERABLE ROM
3	M58659P	Mitsubishi Electric Semiconductor	512 BIT ELECTRICALLY ALTERABLE ROM
4	FU-68PDF-510M58B	Mitsubishi Electric Semiconductor	1.55 um DFB-LD MODULE Input impedance is 25W Multi qu antum wells (MQW) DFB Laser Diode module Emission wavelength is in 1.55mm band Polarization maintaining optical fiber pig-tail Built-in optical isolator Built-in thermal electric cooler Butterfly package With photodiod
5	FU-68PDF-520M58B	Mitsubishi Electric Semiconductor	1.55 um DFB-LD MODULE Multi qu antum wells (MQW) DFB Laser Diode module Input impedance is 25W Emission wavelength is in 1.55mm band Polarization maintaining optical fiber pig-tail Built-in optical isolator Built-in thermal electric cooler Butterfly package With photodiod
6	M58653P	Mitsubishi	700-BIT ELECTRICALLY ALTERABLE ROM • Word-by-word electrically alterable • Non-volatile data storage ......... 10 years (min) • Write/erase time ..... _......... 20ms/word • Typical power supply voltages ....... -30V, +5V • Number of erase-write cycles ....... 105 times (min) • Number
7	M58657P	Mitsubishi	1400-BIT(100-WORD BY 14-BIT) ELECTRICALLY ALTERABLE ROM • Word-by-word electrically alterable • Non-volatile data storage . . . . . . . . . . 10 years (min) • Write/erase time ..... _.......... 20ms word • Typical power supply voltages ....... -30V, +5V • Number of erase-write cycles ....... 105 times (mi
8	M58990P	Mitsubishi Electric	CMOS 8-Bit 8-Channel A/D Converter
9	M58658P	Mitsubishi Electric	320-Bit Electrically Alterable ROM • Word-by-word electrically alterable • Non-volatile data storage __ , ______ ,10 years (min) • Write/erase time, , ____ , __ , ______ 20ms, word • Typical power supply voltages ___ , __ ,-30V, +5V • Number of erase-write cycles, ______ 105 times (mi