No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Mitsubishi Electric Semiconductor |
IGBT MODULES olation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 600 ±20 400 800 400 800 960 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C V N •m N •m g (Note 2) (Note 2) |
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Mitsubishi Electric Semiconductor |
IGBT MODULES eatures: ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Auxilliary Inverter for Traction ٗ UPS ٗ Welding Power |
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Mitsubishi Electric Semiconductor |
IGBT MODULES G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 400 800 400 800 1600 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 Unit V V A A W °C °C V N •m N •m N •m g (Note 2) (Note 2) Main terminal to ba |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric |
IGBT MODULES or dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 400 800 400 800 1100 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 |
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Mitsubishi Electric |
IGBT MODULES ion voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M8 Mounting holes M6 G(E) terminal M4 Typical value Ratings 1700 ±20 400 800 400 800 3780 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V |
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Mitsubishi Electric Semiconductor |
IGBT MODULES llector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value Ratings 1200 ±20 400 800 400 800 2710 –40 ~ +150 –40 ~ +12 |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT Module ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diodes ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ UPS ٗ Forklift E E C G Outline Drawing and Circuit Diagram Dimensions A B C D |
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Mitsubishi Electric |
IGBT MODULES dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 400 800 400 800 1950 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ |
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Mitsubishi Electric |
IGBT MODULES age temperature Isolation voltage Mounting torque Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 250 ±20 400 800 400 800 890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W °C °C V N •m N •m g |
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Mitsubishi Electric |
IGBT MODULES emperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ = 92°C*3 Pulse Pulse TC = 25°C Conditions Ratings 600 ±20 400 800 400 800 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W °C °C V N •m N •m g (N |
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Mitsubishi Electric |
IGBT MODULES e Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, TC’ = 111°C*3 Pulse Pulse TC = 25°C Conditions Ratings 1200 ±20 400 800 400 800 1470 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A A A W °C °C V |
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Mitsubishi Electric |
HVIGBT MODULES INGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperatur |
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Mitsubishi Electric |
2nd-Version HVIGBT Modules Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation volta |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT MODULES ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking Applications: ٗ AC Motor Control ٗ Motion/Servo Control ٗ UPS ٗ Welding Power Supplies Ordering In |
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Mitsubishi Electric Semiconductor |
IGBT MODULES □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power S |
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Mitsubishi Electric Semiconductor |
IGBT MODULES u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering In |
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Mitsubishi Electric |
IGBT MODULES current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (N |
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