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Mini-Circuits |
DC-6 GHz Monolithic Amplifier • DC to 6 GHz • Fixed 5V operation • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. • High Pout, P1dB 20.5dBm typ • Unconditionally stable • Transient protected • Excellent ESD Protection • Protected by US patent 6,943,629 Typical Applicati |
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Mini-Circuits |
Monolithic Amplifier • Gain,10 dB typ. at 100 MHz • High Pout, P1dB 19.1 dBm typ. • High IP3, 42 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 DC-7 GHz GVA-81+ |
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Mini-Circuits |
Monolithic Amplifier Die • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Transient protected, US patent 6,943,629 Typical Applications • Base station infrastructure • |
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Mini-Circuits |
Surface Mount Monolithic Amplifier • DC to 6 GHz • Fixed 5V operation • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. • High Pout, P1dB 20.5dBm typ • Unconditionally stable • Transient protected • Excellent ESD Protection • Protected by US patent 6,943,629 DC-6 GHz GVA-84 |
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Mini-Circuits |
Monolithic Amplifier • Gain, 15 dB typ. at 100 MHz • High Pout, P1dB 20 dBm typ. • High IP3, 40 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 DC-7 GHz GVA-82+ |
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Mini-Circuits |
DC-7 GHz Monolithic Amplifier • High Gain, 24 dB typ. at 100 MHz • High Pout, P1dB 20.5 dBm typ. at 100 MHz • High IP3, 37 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 T |
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Mini-Circuits |
Monolithic Amplifier • High Gain, 20 dB typ. at 100 MHz • High Pout, P1dB 18 dBm typ. • High IP3, 33 dBm typ. at 100 MHz • Ruggedized Design • 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 DC-7 GHz GVA-83+ C |
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Mini-Circuits |
Monolithic Amplifier Feature Ultra Broad Band: 0.01 to 12 GHz Ultra Flat Gain ±0.7 dB typ: 0.05 - 8 GHz No External Matching Components Required Excellent ESD HBM: class 1C (1000 to <2000V) MM: class M2 (100 to <200V) Advantages Broadband covering primary wireless commu |
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Mini-Circuits |
Monolithic Amplifier • Gain,10 dB typ. at 100 MHz • High Pout, P1dB 19.1 dBm typ. • High IP3, 42 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 Typical Applicatio |
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Mini-Circuits |
Monolithic Amplifier • Gain, 15 dB typ. at 100 MHz • High Pout, P1dB 20 dBm typ. • High IP3, 40 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 Typical Application |
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Mini-Circuits |
Monolithic Amplifier • High Gain, 20 dB typ. at 100 MHz • High Pout, P1dB 18 dBm typ. • High IP3, 33 dBm typ. at 100 MHz • Ruggedized Design • 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 Typical Applications |
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Mini-Circuits |
Monolithic Amplifier • DC to 6 GHz • Fixed 5V operation • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. • High Pout, P1dB 20.5dBm typ • Unconditionally stable • Transient protected • Excellent ESD Protection • Protected by US patent 6,943,629 Typical Applicati |
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Mini-Circuits |
Monolithic Amplifier Feature Ultra Broad Band: 0.01 to 12 GHz Ultra Flat Gain ±0.7 dB typ: 0.05 - 8 GHz No External Matching Components Required Excellent ESD HBM: class 1C (1000 to <2000V) MM: class M2 (100 to <200V) Advantages Broadband covering primary wireless commu |
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Desde 2024. D4U Semiconductor.
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