No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Mini-Circuits |
Monolithic Amplifiers High Directivity • • • • • • • • • CASE STYLE:DQ849 MNA-SERIES 3V & 5V operation micro-miniature size .120"x.120" no external biasing circuit required high directivity, 20 dB typ. wide bandwidth, 0.5 to 5.9 GHz low noise figure, 2.9 dB typ. (MNA-6) output power, up |
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Mini-Circuits |
Surface Mount Monolithic Amplifier • InGaP HBT microwave amplifier • Miniature SOT-89 package • Frequency range, DC to 4 GHz • Output power, 18.0 dBm typ. • Excellent package for heat dissipation, exposed metal bottom • Low thermal resistance for high reliability • Aqueous washable • P |
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Mini-Circuits |
(MAR-xxx) Monolithic Amplifiers |
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Mini-Circuits |
Monolithic Amplifer • High gain, 25.6 dB typ. at 100 MHz • High IP3, 38 dBm typ. • High Pout, P1dB 21.9 dBm typ. • Internally Matched to 50 Ohms • Transient Protected • Excellent ESD Protection • Unconditionally stable • Aqueous washable • Protected by US Patent 6,943,6 |
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Mini-Circuits |
DC-6 GHz Monolithic Amplifier • DC to 6 GHz • Fixed 5V operation • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. • High Pout, P1dB 20.5dBm typ • Unconditionally stable • Transient protected • Excellent ESD Protection • Protected by US patent 6,943,629 Typical Applicati |
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Mini-Circuits |
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz l l l l low thermal resistance miniature microwave amplifier frequency range, DC to 8 GHz, usable to 10 GHz up to 18.4 dBm typ. (16.5 dBm min) output power model identification Model ERA-1, ERA-1SM ERA-2, ERA-2SM ERA-21SM ERA-3, ERA-3SM ERA-33SM ER |
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Mini-Circuits |
Monolithic Amplifier • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 17 dB typ. • Low noise figure, 2.9 dB typ. • Output power, up to +18 dBm typ. • Excellent repeatability • Low cost • Aqueous w |
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Mini-Circuits |
Monolithic Amplifier • Gain,10 dB typ. at 100 MHz • High Pout, P1dB 19.1 dBm typ. • High IP3, 42 dBm typ. at 100 MHz • Ruggedized design • Fixed 5V operation • Unconditionally stable • Excellent ESD Protection • Transient protected, US patent 6,943,629 DC-7 GHz GVA-81+ |
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Mini-Circuits |
Monolithic Amplifier Feature High Gain 25-32 dB Ultra Low Noise: 0.8 dB NF at 0.9 GHz High IP3: +36 dBm IP3 at 0.9 GHz Output Power: +22 dBm at 0.9 GHz Internally Matched Ceramic Hermetic Package Max Input Power +25 dBm High Reliability Advantages Incorporating |
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Mini-Circuits |
Monolithic Amplifier Feature Hermetically Sealed Wideband, DC to 7 GHz High IP3 vs. DC power consumption • +38.1 dBm at 0.1 GHz • +35 dBm at 1 GHz Advantages Ideal for use anywhere long-term reliability adds bottom-line value: high moisture areas, busy production lines, |
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Mini-Circuits |
Surface Mount Monolithic Amplifiers frequency range, DC to 8 GHz, useable to 10 GHz up to 17.3 dBm typ. output power excellent package for heat dissipation, exposed metal bottom flat output power to 10 GHz (LEE-19,-29,-39) Applications CASE STYLE : FG873 • • • • cellular PCS communi |
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Mini-Circuits |
Surface Mount Monolithic Amplifiers miniature SOT-89 package frequency range, DC to 7 GHz up to 17.6 dBm typ. output power excellent package for heat dissipation, exposed metal bottom Applications CASE STYLE : DF782 • cellular • PCS • communication receivers & transmitters Electrica |
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Mini-Circuits |
Surface Mount Monolithic Amplifiers miniature SOT-89 package frequency range, DC to 7 GHz up to 17.6 dBm typ. output power excellent package for heat dissipation, exposed metal bottom Applications CASE STYLE : DF782 • cellular • PCS • communication receivers & transmitters Electrica |
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Mini-Circuits |
Plug-In Amplifier • wide band, 10 to 2500 MHz • general purpose gain block • +15V at 35mA typical CASE STYLE: PP120 PRICE: $73.95 ea. QTY (1-9) Pin Connections RF IN RF OUT DC CASE GND 2 4 1 3 Applications • military and high reliability • small signal amplifier • b |
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Mini-Circuits |
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz l l l l low thermal resistance miniature microwave amplifier frequency range, DC to 8 GHz, usable to 10 GHz up to 18.4 dBm typ. (16.5 dBm min) output power model identification Model ERA-1, ERA-1SM ERA-2, ERA-2SM ERA-21SM ERA-3, ERA-3SM ERA-33SM ER |
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Mini-Circuits |
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz l l l l low thermal resistance miniature microwave amplifier frequency range, DC to 8 GHz, usable to 10 GHz up to 18.4 dBm typ. (16.5 dBm min) output power model identification Model ERA-1, ERA-1SM ERA-2, ERA-2SM ERA-21SM ERA-3, ERA-3SM ERA-33SM ER |
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Mini-Circuits |
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz l l l l low thermal resistance miniature microwave amplifier frequency range, DC to 8 GHz, usable to 10 GHz up to 18.4 dBm typ. (16.5 dBm min) output power model identification Model ERA-1, ERA-1SM ERA-2, ERA-2SM ERA-21SM ERA-3, ERA-3SM ERA-33SM ER |
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Mini-Circuits |
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz l l l l low thermal resistance miniature microwave amplifier frequency range, DC to 8 GHz, usable to 10 GHz up to 18.4 dBm typ. (16.5 dBm min) output power model identification Model ERA-1, ERA-1SM ERA-2, ERA-2SM ERA-21SM ERA-3, ERA-3SM ERA-33SM ER |
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Mini-Circuits |
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz -40°C to 85°C -55°C to 150°C 8V 400mW 10 dBm ! NEW VNA-21 Maximum Ratings Operating Temperature Storage Temperature DC Voltage Power Input Power (no damage) • • • • • • • • 3V & 5V operation no external biasing circuit required high directivity, |
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Mini-Circuits |
Monolithic Amplifier • 2.8V & 5V operation • Micro-miniature size .120”X.120” • Internal DC blocking at RF input and output • High directivity, 20-24 dB typ. • Wide bandwidth, 1.5 to 5.9 GHz • Low noise figure • Output power, up to +15.9 dBm typ. MNA-7+ • Excellen |
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