| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Micross |
128K x 32 Radiation Tolerant EEPROM • Access time of 250ns , 300ns • Operation with single 3.3V (+ .3V) supply • LOW Power Dissipation: Active(Worst case): 300mW (MAX), Max Speed Operation Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode • Automatic Byte Write: 15 ms (MAX) • Autom |
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Micross |
128K x 32 EEPROM • Access times of 120, 140, 150, 200, 250, and 300 ns • Built in decoupling caps for low noise operation • Organized as 128K x32; User configurable as 256K x16 or 512K x8 • Operation with single 5 volt supply • Low power CMOS • TTL Compatible Inputs a |
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Micross |
128K x 32 Radiation Tolerant EEPROM • Access time of 150ns, 200ns, 250ns • Operation with single 5V + 10% supply • Power Dissipation: Active: 1.43 W (MAX), Max Speed Operation Standby: 7.7 mW (MAX), Battery Back-up Mode • Automatic Byte Write: 10 ms (MAX) • Automatic Page Write (128 by |
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Micross |
128K x 32 FLASH • Fast Access Times: 60, 70, 90, 120 and 150ns • Operation with single 5V (±10%) • Compatible with JEDEC EEPROM command set • Any Combination of Sectors can be Erased • Supports Full Chip Erase • Embedded Erase and Program Algorithms • TTL Compatible |
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Micross |
512K x 32 SRAM • Operation with single 5V • Built in decoupling caps for supply low noise • Vastly improved Icc Specs • Organized as 512Kx32 , byte • High speed: 12, 15, 17, 20, 25, selectable 35, 45 & 55ns • TTL Compatible Inputs and • Low power CM |
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Micross |
2M x 32 FLASH • Fast access times of 90ns, 120ns, and 150ns • 5.0V ±10%, single power supply operation • Low power consumption(TYP): 4μA CMOS stand-by * TYP ICC(active) <120mA for READ/WRITE • 20 year DATA RETENTION • Minimum 1,000,000 Program/Erase Cycles per sec |
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Micross |
Multi-Chip Module • 64Mb device, total density, organized as 2M x 32 • Bottom Boot Block (Sector) Architecture (Contact factory for top boot) • Operation with single 3.0V Supply • Available in multiple Access time variations • Individual byte control via individual by |
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Micross |
512K x 32 SRAM • Operation with single 5V • Built in decoupling caps for supply low noise • Vastly improved Icc Specs • Organized as 512Kx32 , byte • High speed: 12, 15, 17, 20, 25, selectable 35, 45 & 55ns • TTL Compatible Inputs and • Low power CM |
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Micross |
16 MB ASYNC SRAM Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables Random Access Memory Array Fast Access Times: 12, 15, 20, and 25ns TTL Compatible I/O Fully Static, No Clocks |
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Micross |
128K x 16 SRAM & 512K x 16 FLASH • Operation with single 5V supply • High speed: 35ns SRAM, 90ns FLASH • Built in decoupling caps and multiple ground pins for low noise • Organized as 128K x 16 SRAM and 512K x 16 FLASH • Low power CMOS • TTL Compatible Inputs and Outputs • Both bloc |
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Micross |
128K x 32 SRAM • Fast Access Times of 10 to 25ns • Overall Configuration: 128K x 32 • 4 Low Power CMOS 128K x 8 SRAMs in one MCM • +3.3V power supply • Internal Decoupling Capacitors • Low Operating Power, 1/2 Previous Generation OPTIONS • Operating Temperature Ran |
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Micross |
512K x 32 SRAM • Fast access times: 10, 12, 15, 17 and 20ns • Fast OE\ access times: 6ns • Ultra-low operating power < 1W worst case • Single +3.3V ±0.3V power supply • Fully static -- no clock or timing strobes necessary • All inputs and outputs are TTL-compatible |
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Micross Components |
High Speed Static RAM Integrated Real-Time Memory Array Solution No latency or refresh fycles Parallel Read/Write Interface User Configurable via multiple enables Random Access Memory Array Fast Access Times: 12, 15, 20, and 25ns TTL Compatible I/O Fully Static, No Clocks |
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Desde 2024. D4U Semiconductor.
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