Micross AS2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	AS28C010	Micross	128K x 8 EEPROM  Access speed: 120, 150, 200, and 250ns  Data Retention: 100 Years  Low power, active current: 50mA, standby current: 500uA  Single +5V (+10%) power supply  Data Polling and Toggle Bit  Erase/Write Endurance (10,000 byte mode / 100,000 page mod
2	AS28F128J3A	Micross	128Mb x8 and x16 Q-FLASH Memory
3	AS29LV016	Micross	CMOS 3.0 Volt-Only Boot Sector Flash Memory — A hardware method of locking a sector to prevent any program or erase operations within that sector — Sectors can be locked in-system or via programming equipment — Temporary Sector Unprotect feature allows code changes in previously locked sectors
4	AS29F010	Micross	128K x 8 FLASH • Single 5.0V ±10% power supply operation • Low power consumption: 3 12 mA typical active read current 3 30 mA typical program/erase current 3 <1 μA typical standby current • Flexible sector architecture 3 Eight 16Kbyte sectors 3 Any combination of s
5	AS29372	Micross Components	Voltage Regulator High output voltage accuracy Guaranteed 750mA output Low quiescent current Low dropout voltage Extremely tight load and line regulation Very low temperature coefﬁcient Current and thermal limiting Input can withstand -20V reverse battery and +60V pos
6	AS29F040	Micross	512K x 8 FLASH • Single 5.0V ±10% power supply operation • Fastest access times: 55, 60, 70, 90, 120, & 150ns • Low power consumption: 3 20 mA typical active read current 3 30 mA typical program/erase current 3 1 μA typical standby current (standard access time to