| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microsemi Corporation |
PIN DIODE HIGH POWER STUD W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages als |
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Microsemi Corporation |
PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE |
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Microsemi |
ATTENUATOR AND POWER PIN DIODES |
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Microsemi Corporation |
PIN DIODE HIGH POWER STUD W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages als |
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Microsemi |
Pin Diode High Power Stud High Power Stud Mount Package. High Zero Bias Impedance Very Low Inductance and Capacitance. No Internal Lead Straps. Small Mechanical Outline. APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. Style “D” Insulated Stud Style “C” |
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Microsemi |
Pin Diode High Power Stud High Power Stud Mount Package. High Zero Bias Impedance Very Low Inductance and Capacitance. No Internal Lead Straps. Small Mechanical Outline. APPLICATIONS/BENEFITS MRI Applications. High Power Antenna Switching. Style “D” Insulated Stud Style “C” |
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Microsemi Corporation |
PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE |
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Microsemi Corporation |
PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE |
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Microsemi Corporation |
PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE |
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Microsemi |
ATTENUATOR AND POWER PIN DIODES |
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Microsemi |
ATTENUATOR AND POWER PIN DIODES |
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Microsemi |
ATTENUATOR AND POWER PIN DIODES HF band (2-30 MHz) PIN Long Lifetime (25μs typical) High Power ( 1kW, CW) High Isolation (32dB) Low Loss (0.25dB) Very Low Distortion (IP3=60dBm) Voltage ratings to 1000 V RoHS compliant packaging Available1 (use UMX2101B, etc.) ABSO |
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Microsemi |
ATTENUATOR AND POWER PIN DIODES |
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Microsemi |
ATTENUATOR AND POWER PIN DIODES |
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Microsemi Corporation |
PIN DIODE HIGH POWER STUD W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages als |
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Microsemi Corporation |
PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE |
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Microsemi Corporation |
PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE |
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Microsemi Corporation |
PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE |
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Microsemi |
Triple dual Common Source Super Junction MOSFET Power Module • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Inte |
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Microsemi |
ATTENUATOR AND POWER PIN DIODES |
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Desde 2024. D4U Semiconductor.
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