| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microsemi Corporation |
(MS1635 - MS1645) 16 AMP SCHOTTKY BARRIER RECTIFIER |
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Microsemi Corporation |
(SMS03 - SMS24) 4 LINE UNIDIRECTIONAL TVSarray • • • • Protects 3.0/3.3 up through 24 volt components Protects 4 unidirectional lines Provides electrically isolated protection SOT 23-6L Packaging • • PACKAGING Tape & Reel per EIA Standard 481 3,000 pieces per 7 inch reel MAXIMUM RATING S • • • |
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Microsemi Corporation |
(SMS03C - SMS24C) 4 LINE BIDIRECTIONAL TVSarray • • • • Protects 3.0/3.3 up through 24 volt components Protects 4 bi-directional lines Provides electrically isolated protection SOT 23-6L Packaging www.DataSheet4U.com PACKAGING • • Tape & Reel per EIA Standard 481 3,000 pieces per 7 inch MAXIMUM |
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Microsemi |
RF & MICROWAVE TRANSISTORS W W W . Microsemi . COM The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. 175 MHz !" 7.5 Volts !" Common Emitter !" POUT = 1.4 W |
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Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIER |
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Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIER |
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Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIER |
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Microsemi |
RF & MICROWAVE TRANSISTORS W W W . Microsemi . COM The MS1504 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1504 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. IMPORTANT: |
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Microsemi |
RF & MICROWAVE TRANSISTORS W W W . Microsemi . COM The MS1510 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the 450 – 512 MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand i |
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Microsemi |
RF & MICROWAVE TRANSISTORS 800-960MHz CELLULAR BASE STATION GOLD METALLIZATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY POUT = 150 W PEP INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION 8.0dB GAIN @ 900 MHz MAX IMD -28dBc @ 150 W PEP 5:1 VSWR CAPABILITY @ RATED CONDITIONS 3 dB |
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Microsemi |
RF & MICROWAVE TRANSISTORS W W W . Microsemi . COM The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. IMPORTANT: |
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Microsemi |
RF & MICROWAVE TRANSISTORS W W W . Microsemi . COM The MS1401 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. 150 MHz !" 7.5 Volts !" Common Emitter !" POUT = 2.5 |
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Microsemi Corporation |
(SMS03C - SMS24C) 4 LINE BIDIRECTIONAL TVSarray • • • • Protects 3.0/3.3 up through 24 volt components Protects 4 bi-directional lines Provides electrically isolated protection SOT 23-6L Packaging www.DataSheet4U.com PACKAGING • • Tape & Reel per EIA Standard 481 3,000 pieces per 7 inch MAXIMUM |
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Microsemi Corporation |
(MS1680 - MS16100) 16 AMP SCHOTTKY RECTIFIER |
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Microsemi Corporation |
(MS1680 - MS16100) 16 AMP SCHOTTKY RECTIFIER |
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Microsemi Corporation |
(MS1680 - MS16100) 16 AMP SCHOTTKY RECTIFIER |
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Microsemi Corporation |
(MS1635 - MS1645) 16 AMP SCHOTTKY BARRIER RECTIFIER |
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Microsemi Corporation |
(MS1650 - MS1660) 16 Amp Schottky Barrier Rectifiers |
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Microsemi Corporation |
(MS1650 - MS1660) 16 Amp Schottky Barrier Rectifiers |
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Microsemi Corporation |
10 AMP SCHOTTKY BARRIER RECTIFIERS |
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Desde 2024. D4U Semiconductor.
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