Microsemi Corporation UM2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HUM2015	Microsemi Corporation	PIN DIODE HIGH POWER STUD W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages als
2	UM2300	Microsemi Corporation	PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE
3	HUM2020	Microsemi Corporation	PIN DIODE HIGH POWER STUD W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages als
4	UM2301	Microsemi Corporation	PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE
5	UM2302	Microsemi Corporation	PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE
6	UM2304	Microsemi Corporation	PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE
7	HUM2010	Microsemi Corporation	PIN DIODE HIGH POWER STUD W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages als
8	UM2306	Microsemi Corporation	PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE
9	UM2308	Microsemi Corporation	PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE
10	UM2310	Microsemi Corporation	PIN DIODE • • • • • LF band (100 KHz) PIN Long Lifetime (80 µs typ.) High Power (1 KW CW) • High Isolation (35 dB) Low Loss (0.2 dB) • Very Low Distortion (IP3 = > 60 dBm) Voltage Ratings to 1000 V PIN DIODE SWITCH Description TYPICAL CAPACITANCE vs REVERSE