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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Gpe = 10 dB (typ) @ 60 mA, 300 MHz 3 GHz Current-Gain Bandwidth Product (min) @ 60mA Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon N |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS www.DataSheet4U.com • Low Cost SO-8 Plastic Surface Mount Package. • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Ree |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz 11.5 minimum Gain @ 12.5V, 175 MHz 50% Efficiency @ 12.5V, 175 MHz 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR TO-39 (common collector) DESCR |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • • Low Cost SO-8 Plastic Surface Mount Package. S-Parameter Characterization Tape and Reel Packaging Options Available Low Voltage Version of MRF3866 Maximum Available Gain – 20dB(typ) @ 200MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suff |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-3 |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • • Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure – 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package • Macro X DESCRIPTION: Designed for use in high ga |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS • • • Silicon NPN, high Frequency, To-72 packaged, Transistor High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz 2 • High FT - 4 GHz (typ) @ IC = 15 mAdc 1 4 3 1. Emitter 2 |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS www.DataSheet4U.com • Low Cost SO-8 Plastic Surface Mount Package. • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Ree |
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Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS www.DataSheet4U.com • Low Cost SO-8 Plastic Surface Mount Package. • • • S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix –Tape and Reel, 500 units R2 suffix –Tape and Ree |
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Desde 2024. D4U Semiconductor.
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