Microsemi Corporation 2N2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N2904	Microsemi Corporation	PNP SWITCHING SILICON TRANSISTOR • JEDEC registered 2N2904 through 2N2905A series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLI
2	2N2907A	Microsemi Corporation	PNP TRANSISTOR 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc V(BR)CEO ICBO IEBO ICES 60 Vdc 10 μAdc 10 ηAdc 50 ηAdc 10 μAdc 50 ηAdc TO-18 (TO-206AA
3	2N2904A	Microsemi Corporation	PNP SWITCHING SILICON TRANSISTOR • JEDEC registered 2N2904 through 2N2905A series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLI
4	2N2905A	Microsemi Corporation	PNP SWITCHING SILICON TRANSISTOR • JEDEC registered 2N2904 through 2N2905A series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/290. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). APPLI
5	2N2880	Microsemi Corporation	5 Amp/ 80V/ Planar/ NPN Power Transistors JAN/JTX/JANTXV/JANS • • High Reliability Greater Gain Stability 5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices wit
6	2N2604	Microsemi Corporation	(2N2604 / 2N2605) PNP SILICON LOW POWER TRANSISTOR mitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 50 Vdc 2N2604 2N2605 V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES 80 70 60 6.0 10 2.0 10 Vdc Vdc Vdc ηAdc ηAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978)
7	JAN2N2432	Microsemi Corporation	NPN SILICON LOW POWER TRANSISTOR V(BR)CEO Collector-Emitter Cutoff Current VCB = 25 Vdc VCB = 40 Vdc 2N2432 2N2432A ICES Min. 15 18 10 30 45 TO- 18* (TO-206AA) *See appendix A for package outline Max. Unit Vdc Vdc 10 ηAdc 10 6 Lake Street, Lawrence, MA 01841 1-800-446-
8	JAN2N2222A	Microsemi Corporation	NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector
9	JAN2N2329AS	Microsemi Corporation	SCRs 1.6 Amp/ Planear
10	JANTX2N2328S	Microsemi Corporation	SCRs 1.6 Amp/ Planear
11	JANTXV2N2222A	Microsemi Corporation	NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector
12	JANTXV2N2324S	Microsemi Corporation	SCRs 1.6 Amp/ Planear
13	JANTX2N2906A	Microsemi Corporation	PNP SMALL SIGNAL SILICON TRANSISTOR Current VCE = 50 Vdc ICES Emitter-Base Cutoff Current VEB = 4.0 Vdc IEBO VEB = 5.0 Vdc TO-18* (TO-206AA) 4 PIN* 2N2906AUA, 2N2907AUA 3 PIN* 2N2906AUB, 2N2907AUB *See appendix A for package outline Min. Max. Unit 60 Vdc µAdc 10 10 ηAdc
14	2N2904AL	Microsemi Corporation	PNP SWITCHING SILICON TRANSISTOR IC = 10 mAdc Collector-Emitter Cutoff Voltage VCE = 40 Vdc VCE = 60 Vdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VEB = 3.5 Vdc VEB = 5.0 Vdc 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 2N2904A, L, 2
15	2N2905AL	Microsemi Corporation	PNP SWITCHING SILICON TRANSISTOR IC = 10 mAdc Collector-Emitter Cutoff Voltage VCE = 40 Vdc VCE = 60 Vdc Collector-Base Cutoff Current VCB = 50 Vdc VCB = 60 Vdc Emitter-Base Cutoff Current VEB = 3.5 Vdc VEB = 5.0 Vdc 2N2904, 2N2905 2N2904A, L, 2N2905A, L 2N2904, 2N2905 2N2904A, L, 2
16	2N2907ADIE	Microsemi Corporation	SWITCHING TRANSISTOR n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .4V @ IC = 150 mAdc PHYSICAL DIMENSIONS Absolute Maximum Ratings: Symbo
17	JAN2N2324AS	Microsemi Corporation	SCRs 1.6 Amp/ Planear
18	JAN2N2329S	Microsemi Corporation	SCRs 1.6 Amp/ Planear
19	JANTX2N2222A	Microsemi Corporation	NPN SILICON SWITCHING TRANSISTOR s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector
20	JANTXV2N2323S	Microsemi Corporation	SCRs 1.6 Amp/ Planear