Microsemi Corporation 1N1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	1N1198	Microsemi Corporation	SILICON POWER RECTIFIER
2	1N1064	Microsemi Corporation	SILICON POWER RECTIFIER
3	JAN1N1188	Microsemi Corporation	Military Silicon Power Rectifier
4	UPF1N100	Microsemi Corporation	SURFACE MOUNT N-CHANNEL MOSFET Rugged POWERMITE 3 Surface Mount Package Low On-State Resistance Avalanche and Surge Rated High Frequency Switching Ultra Low Leakage current UIS rated Available with Lot Acceptance Testing SURFACE MOUNT N – CHANNEL MOSFET Description This device
5	1N106x	Microsemi Corporation	SILICON POWER RECTIFIER
6	1N1582	Microsemi Corporation	(1N158x) SILICON POWER RECTIFIER
7	1N1583	Microsemi Corporation	(1N158x) SILICON POWER RECTIFIER
8	1N1065	Microsemi Corporation	SILICON POWER RECTIFIER
9	1N1066	Microsemi Corporation	SILICON POWER RECTIFIER
10	1N1067	Microsemi Corporation	SILICON POWER RECTIFIER
11	1N1068	Microsemi Corporation	SILICON POWER RECTIFIER
12	1N1069	Microsemi Corporation	SILICON POWER RECTIFIER
13	JAN1N1190	Microsemi Corporation	Military Silicon Power Rectifier
14	1N1581	Microsemi Corporation	(1N158x) SILICON POWER RECTIFIER
15	1N1584	Microsemi Corporation	(1N158x) SILICON POWER RECTIFIER
16	1N1585	Microsemi Corporation	(1N158x) SILICON POWER RECTIFIER
17	1N1586	Microsemi Corporation	(1N158x) SILICON POWER RECTIFIER
18	1N1587	Microsemi Corporation	(1N158x) SILICON POWER RECTIFIER
19	MSAFA1N100D	Microsemi Corporation	Fast MOSFET Die • • • • • • • MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @ T C =
20	MSAFA1N100P3	Microsemi Corporation	MOSFET Device • • • • • • • • Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing “L” Suffix Available with “J” leads 1 Amp 1000 V N-Channel enhancement mode high den