Microsemi 2N1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N1890	Microsemi	NPN LOW POWER SILICON TRANSISTOR
2	2N1893	Microsemi	NPN LOW POWER SILICON TRANSISTOR
3	2N1711	Microsemi	NPN LOW POWER SILICON TRANSISTOR
4	2N1132L	Microsemi	LOW POWER PNP SILICON TRANSISTOR VCB = 50 Vdc ICBO VCB = 30 Vdc Min. Max. Unit Vdc Vdc µAdc mAdc µAdc 40 50 100 10 10 1.0 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N1131, 2N1132 JAN, JANTX ELECTRICAL CHARACTERI
5	2N1485	Microsemi	NPN SILICON MEDIUM POWER TRANSISTOR • JEDEC registered 2N1483 through 2N1486 series. • JAN and JANTX qualifications are available per MIL-PRF-19500/180. • RoHS compliant versions available (commercial grade only). TO-8 Package APPLICATIONS / BENEFITS • General purpose transistors for
6	2N1490	Microsemi	NPN SILICON HIGH POWER TRANSISTOR tage IC = 0.5 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 10 Vdc 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 V(BR)CEO 40 55 60 100 60 100 25 25 Vdc V(
7	2N1794	Microsemi	Silicon Controlled Rectifier
8	2N1802	Microsemi	Silicon Controlled Rectifier
9	2N1481	Microsemi Corporation	NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978)
10	2N1482	Microsemi Corporation	NPN SILICON MEDIUM POWER TRANSISTOR 2 Vdc 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 2N1479, 2N1481 2N1480, 2N1482 V(BR)CEO 40 55 60 100 5.0 5.0 10 Vdc V(BR)CEX Vdc ICBO IEBO µAdc µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978)
11	2N1800F	Microsemi	Silicon Controlled Rectifiers
12	2N1716	Microsemi	NPN Transistor
13	2N1893S	Microsemi	NPN LOW POWER SILICON TRANSISTOR
14	2N1131L	Microsemi	LOW POWER PNP SILICON TRANSISTOR VCB = 50 Vdc ICBO VCB = 30 Vdc Min. Max. Unit Vdc Vdc µAdc mAdc µAdc 40 50 100 10 10 1.0 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N1131, 2N1132 JAN, JANTX ELECTRICAL CHARACTERI
15	2N1132	Microsemi	LOW POWER PNP SILICON TRANSISTOR VCB = 50 Vdc ICBO VCB = 30 Vdc Min. Max. Unit Vdc Vdc µAdc mAdc µAdc 40 50 100 10 10 1.0 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N1131, 2N1132 JAN, JANTX ELECTRICAL CHARACTERI
16	2N1484	Microsemi	NPN SILICON MEDIUM POWER TRANSISTOR • JEDEC registered 2N1483 through 2N1486 series. • JAN and JANTX qualifications are available per MIL-PRF-19500/180. • RoHS compliant versions available (commercial grade only). TO-8 Package APPLICATIONS / BENEFITS • General purpose transistors for
17	2N1487	Microsemi	NPN SILICON HIGH POWER TRANSISTOR tage IC = 0.5 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 10 Vdc 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 V(BR)CEO 40 55 60 100 60 100 25 25 Vdc V(
18	2N1488	Microsemi	NPN SILICON HIGH POWER TRANSISTOR tage IC = 0.5 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 10 Vdc 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 V(BR)CEO 40 55 60 100 60 100 25 25 Vdc V(
19	2N1489	Microsemi	NPN SILICON HIGH POWER TRANSISTOR tage IC = 0.5 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 30 Vdc Emitter-Base Cutoff Current VEB = 10 Vdc 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 2N1487, 2N1489 2N1488, 2N1490 V(BR)CEO 40 55 60 100 60 100 25 25 Vdc V(
20	2N1798	Microsemi	Silicon Controlled Rectifier