| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microsemi |
Schottky Barrier Rectifiers and benefits • Plastic package with UL 94V-0 flammability classification • Flame retardant epoxy molding component • Guardring for overvoltage protection • Low power loss, high efficiency • RoHS compliant (2002/95/EC) 2 12 3 1 3 TO-220AB 2 Des |
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Microsemi Corporation |
Bi-Directional 100 Amp 50-270 Volts Thyristor Surge Protective Device |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Microsemi |
High-Voltage Schottky Diode The following are key features of the APT100S20BG device: Low forward voltage Low leakage current Ultrafast reverse recovery Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the APT100S20BG device: High switching |
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Microsemi |
SCR |
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Microsemi |
600-Watt Transient Voltage Suppressor • Available in both unidirectional and bidirectional configurations • 3σ lot norm screening performed on standby current ID • 100% surge tested devices • Optional 100% screening for avionics grade is available • Various screenings in reference to MIL |
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Microsemi Corporation |
N-Channel MOSFET • Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant TYPICAL APPLICATIONS • PFC and other boost converter • Buck converter • Two switch forward (asym |
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Microsemi |
GaAs PIN DIODES ● Low Series Resistance ● Fast Switching Speed ● Low Capacitance ● No Reverse Bias Required ● Available in Packages and Bondable Chips ● Available as Chip-on-Board Components Applications ● Switches ● Attenuators ● Phase Shifters Maximum Ratings R |
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Microsemi Corporation |
Silicon Controlled Rectifier |
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Microsemi Corporation |
Silicon Controlled Rectifier |
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Microsemi |
MOSFET Power Module 28 27 26 25 23 22 20 19 18 • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Kelvin |
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Microsemi |
MOSFET Power Module • Power MOS 8™ Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Very low stray inductance - Symmetrical design • Internal thermistor for temperature |
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Microsemi Corporation |
5 A High Voltage Schottky Barrier Rectifier WWW . Microsemi . C OM In Microsemi’s new Powermite3® SMT package, these high efficiency ultrafast rectifiers offer the power handing capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at hi |
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Microsemi Corporation |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors • • • • • ECONOMICAL SERIES AVAILABLE IN BOTH UNIDIRECTIONAL AND BI-DIRECTIONAL CONSTRUCTION 5.0 TO 170 STAND-OFF VOLTAGE AVAILABLE 500 WATTS PEAK PULSE POWER DISSIPATION QUICK RESPONSE P5KE5.0 thru P5KE170A DESCRIPTION: This Transient Voltage Sup |
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Microsemi Corporation |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors • • • • • ECONOMICAL SERIES AVAILABLE IN BOTH UNIDIRECTIONAL AND BI-DIRECTIONAL CONSTRUCTION 5.0 TO 170 STAND-OFF VOLTAGE AVAILABLE 500 WATTS PEAK PULSE POWER DISSIPATION QUICK RESPONSE P5KE5.0 thru P5KE170A DESCRIPTION: This Transient Voltage Sup |
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Microsemi Corporation |
(MPD100 - MPD400) STABISTORS Also / Tight Tolerance |
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Microsemi Corporation |
Radar out Pg ηc Rl Pd VSWR-T CHARACTERISTICS Power Output Power Gain Collector Efficiency Return Loss Pulse Droop Load Mismatch Tolerance TEST CONDITIONS F=2700-3100 MHz Pulse Width = 200 µs Duty Factor = 10 % Power Input = 16W Vcc = +36V F = 2700, 2900, 3 |
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Microsemi |
(HU100 - HU102) Ultrafast Recovery Modules |
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Microsemi Corporation |
30kW Transient Voltage Suppressor • • • • • Available in both Unidirectional and Bidirectional construction (Bidirectional with C or CA suffix) Selections for 33 to 400 volt standoff voltages VWM Suppresses transients up to 30 kW @ 10/1000 µs and 200 kW @ 8/20 µs (see Figure 1) Fast |
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Microsemi Corporation |
30kW Transient Voltage Suppressor • • • • • Available in both Unidirectional and Bidirectional construction (Bidirectional with C or CA suffix) Selections for 33 to 400 volt standoff voltages VWM Suppresses transients up to 30 kW @ 10/1000 µs and 200 kW @ 8/20 µs (see Figure 1) Fast |
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Desde 2024. D4U Semiconductor.
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