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Microsemi 015 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
FST40150

Microsemi Corporation
(FST40120 / FST40150) Schottky Barrier Rectifier
Datasheet
2
HUM2015

Microsemi Corporation
PIN DIODE HIGH POWER STUD
W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages als
Datasheet
3
1N6015

Microsemi
Axial-Leaded 500 mW Zener Diodes
section. Microsemi also offers numerous other Zener products to meet higher and lower power applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com APPEARANCE DO-35 (DO-204AH) FEATURES
• JEDEC regis
Datasheet
4
UES3005C

Microsemi Corporation
(UES3005C - UES3015C) RECTIFIERS
Datasheet
5
MS2015

Microsemi Corporation
20 Amp Schottky ORing Rectifier
Datasheet
6
UFT10015

Microsemi
ULTRA FAST RECOVERY MODULES
Datasheet
7
1N6015BUR-1

Microsemi
Surface Mount 500mW Zener Diodes

• Surface mount equivalents to JEDEC registered 1N5985 to 1N6031 series.
• Similar to operating current conditions of the BZX55 Pro Electron series of Zener products in Europe.
• Multiple voltage tolerances are available (see part nomenclature).
• In
Datasheet
8
0150SC-1250M

Microsemi
Silicon Carbide SIT
kage Current VGS = -20V, VDS = 0V θJC1 Thermal Resistance Pout=1250W 750 µA 50 µA 0.15 ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(avg) = 500 mA, Freq = 155 MHz, GPG Pin ηd ψ Po +1dB Common Gate Power Gain Input Power Drain Effi
Datasheet
9
MSC015SMA070B

Microsemi
Silicon Carbide N-Channel Power MOSFET
The following are key features of the MSC015SMA070B device:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable
Datasheet
10
ZL30150

Microsemi
Two Channel Clock Translator/NCO
Ordering Information March 2015
• Generates any Telecom or SyncE frequency independent of the input frequency rate
• Two general purpose synthesizers generate a wide range of digital bus clocks ZL30150GGG2 100 Pin LBGA* Trays *Pb Free Tin/Silve
Datasheet
11
ZL30153

Microsemi
Synchronous Ethernet Network Synchronization DPLL

• Supports requirements of ITU-T G.8262 for Synchronous Ethernet Equipment Slave Clocks (EEC option 1 and 2)
• Supports requirements of Telcordia GR-1244 Stratum 3 and GR-253, ITU-T G.813, and G.781 SETS
• Supports ITU-T G.823, G.824 and G.8261 for 2
Datasheet
12
ZL30159

Microsemi
General Purpose Clock Rate Converter

• Precision synthesizer generates any clock-rate from 1 Hz to 177.5 MHz with jitter below 1ps
• Programmable digital PLL synchronize to any clock rate from 1 Hz (1 pps) to 750 MHz
• Input reference configurable as single ended LVCMOS (up to 177.5 MHz
Datasheet
13
MSC015SDA120B

Microsemi
Zero Recovery Silicon Carbide Schottky Diode
.............................................................................................................................................. 2 2.2 Benefits ............................................................................................
Datasheet
14
MSC015SMA070B4

Microsemi
Silicon Carbide N-Channel Power MOSFET
The following are key features of the MSC015SMA070B4 device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body
Datasheet
15
GC15015

Microsemi Corporation
FREQUENCY LINEAR TUNING VARACTORS
thermal oxide passivation for high reliability, low leakage current, and very low surface noise. They offer Q values well above ion-implanted hyperabrupt diodes. The specifications below apply to chips, or to chips mounted on carriers. Although these
Datasheet
16
AGLN015

Microsemi
IGLOO nano Low Power Flash FPGAs
and Benefits Low Power
• nanoPower Consumption—Industry’s Lowest Power
• 1.2 V to 1.5 V Core Voltage Support for Low Power
• Supports Single-Voltage System Operation
• Low Power Active FPGA Operation
• Flash*Freeze Technology Enables Ultra-Low Power
Datasheet
17
SD1015

Microsemi Corporation
RF & MICROWAVE TRANSISTORS 108-152 MHz APPLICATIONS
Datasheet
18
UES3010C

Microsemi Corporation
(UES3005C - UES3015C) RECTIFIERS
Datasheet
19
UES3015C

Microsemi Corporation
(UES3005C - UES3015C) RECTIFIERS
Datasheet
20
UES3010S

Microsemi Corporation
(UES3005S - UES3015S) RECTIFIERS
Datasheet



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