| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VPP = 12V for fast program (optional) • Asynchronous random/page read – Page width: 4 words – Page acces |
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Micron |
Micron Parallel NOR Flash Embedded Memory Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • Supply voltage – VCC = 5V • Access time: 55ns • Program/erase controller – Embedded byte/word program algorithms |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read |
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Micron Technology |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 –3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words |
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MICRON |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device |
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Micron |
Micron Parallel NOR Flash Embedded Memory Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • Supply voltage – VCC = 5V • Access time: 55ns • Program/erase controller – Embedded byte/word program algorithms |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 –3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words |
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MICRON |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device |
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MICRON |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device |
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MICRON |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device |
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MICRON |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device |
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MICRON |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features • Stacked device (two 256Mb die) • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 –3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchro |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory M29W512GH70N3E, M29W512GH7AN6E Features • Stacked device (two 256Mb die) • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VCCQ = 1.65 –3.6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchro |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read) – VPP = 12V for fast program (optional) • Asynchronous random/page read – Page width: 4 words – Page access: 25ns – Random acce |
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MICRON |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx PC28F00BM29EWxx, RC28F00BM29EWxx Features • 2Gb = stacked device |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read |
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Micron |
Parallel NOR Flash Embedded Memory Parallel NOR Flash Embedded Memory JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX Features • Supply voltage – VCC = 2.7 –3.6V (program, erase, read |
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Desde 2024. D4U Semiconductor.
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