| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microchip Technology |
16K (2K x 8) CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles • Automatic Write Operation |
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Microchip Technology |
4K (512 x 8) CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • Endurance - Minimum 104 Erase/Write Cycles - Automatic Write Operation - In |
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Microchip Technology |
16K (2K x 8) CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles • Automatic Write Operation |
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Microchip Technology |
64K CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write Cycles • Automatic Write Opera |
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Microchip Technology |
64K CMOS EEPROM • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times – Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet) – 1 to 64- |
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Desde 2024. D4U Semiconductor.
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