| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microchip |
N-Channel DMOS FET • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • |
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Microchip |
N-channel MOSFET • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • |
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Microchip |
250V N-Channel MOSFET The following are key features of the MRH25N12U3SR/JANSR2N7593U3 device: • Low RDS(on) • Fast switching • Single-event hardened • Low gate charge • Simple drive • Ease of paralleling • Hermetically sealed • Surface-mount design • Ceramic package • ES |
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Microchip |
N-Channel Vertical DMOS FET • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • |
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Microchip |
Preliminary 100V N-Channel Radiation-Hardened MOSFET • Low RDS(on) • Fast Switching • Single Event Hardened • Low Gate Charge • Simple Drive • Ease Of Paralleling • Hermetically Sealed • Surface Mount • Ceramic Package Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00005109A - 1 A |
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Microchip |
150V N-Channel MOSFET The following are key features of the MRH15N19U3SR/JANSR2N7589U3 device: • Low RDS(on) • Fast switching • Single-event hardened • Low gate charge • Simple drive • Ease of paralleling • Hermetically sealed • Surface-mount design • Ceramic package • ES |
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Desde 2024. D4U Semiconductor.
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