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Microchip Technology |
8K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical • 1024 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed erase and write cycles • Block |
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Microchip Technology |
(25LC160A/B) 16K SPI Bus Serial EEPROM • Max. Clock 10 MHz • Low-Power CMOS Technology • 2048 x 8-bit Organization • 16-Byte Page (‘A’ version devices) • 32-Byte Page (‘B’ version devices) • Write Cycle Time: 5 ms max. • Self-Timed Erase and Write Cycles • Block Write Protection: |
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Microchip Technology |
(25LC160A/B) 16K SPI Bus Serial EEPROM • Max. Clock 10 MHz • Low-Power CMOS Technology • 2048 x 8-bit Organization • 16-Byte Page (‘A’ version devices) • 32-Byte Page (‘B’ version devices) • Write Cycle Time: 5 ms max. • Self-Timed Erase and Write Cycles • Block Write Protection: |
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MicrochipTechnology |
64K SPI Bus Serial EEPROM • Low-power CMOS technology - Write current: 3 mA typical - Read current: 500 µA typical - Standby current: 500 nA typical • 8192 x 8 bit organization • 32 byte page • Write cycle time: 5 ms max. • Self-timed ERASE and WRITE cycles • Block write prot |
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MicrochipTechnology |
4K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA, typical - Read current: 500 μA, typical - Standby current: 500 nA, typical • 512 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed Erase and Write cycles • Blo |
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MicrochipTechnology |
16K SPI Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 A typical - Standby current: 500 nA typical • 2048 x 8-bit organization • 16 byte page • Write cycle time: 5 ms max. • Self-timed erase and write cycles • Block write p |
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Microchip |
8K SPI Bus Serial EEPROM • Max. clock 10 MHz • Low-power CMOS technology • 1024 x 8-bit organization • 16 byte page (‘A’ version devices) • 32 byte page (‘B’ version devices) • Write cycle time: 5 ms max. • Self-timed ERASE and WRITE cycles • Block write protection |
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Microchip Technology |
1 Mbit SPI Bus Serial EEPROM • 20 MHz max. Clock Speed • Byte and Page-level Write Operations: - 256 byte page - 6 ms max. write cycle time - No page or sector erase required • Low-Power CMOS Technology: - Max. Write current: 5 mA at 5.5V, 20 MHz - Read current: 7 mA at 5.5V, 2 |
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Microchip Technology |
8K-256K SPI Serial EEPROM • Max. Clock 10 MHz • Low-power CMOS Technology - Max. Write Current: 5 mA at 5.5V, 10 MHz - Read Current: 5 mA at 5.5V, 10 MHz - Standby Current: 5 μA at 5.5V • 16,384 x 8-bit Organization • 64 Byte Page • Self-timed Erase and Write Cycles (5 ms max |
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Microchip Technology |
EEPROM • 10 MHz max. Clock Speed • Byte and Page-level Write Operations: - 128-byte page - 5 ms max. - No page or sector erase required • Low-Power CMOS Technology: - Max. Write Current: 7 mA at 5.5V - Read Current: 10 mA at 5.5V, 10 MHz - Standby Current |
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Microchip Technology |
(25LC0x0A) 1K-4K SPI Serial EEPROM High Temp Family Data Sheet • Max. Clock 5 MHz • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 5 MHz - Read Current: 5 mA at 5.5V, 5 MHz - Standby Current: 10 μA at 5.5V • 128 x 8 through 512 x 8-bit Organization • Byte and Page-level Write Operations • Self-T |
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Microchip Technology |
(25LC0x0A) 1K-4K SPI Serial EEPROM High Temp Family Data Sheet • Max. Clock 5 MHz • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 5 MHz - Read Current: 5 mA at 5.5V, 5 MHz - Standby Current: 10 μA at 5.5V • 128 x 8 through 512 x 8-bit Organization • Byte and Page-level Write Operations • Self-T |
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Microchip |
8K-256K SPI Serial EEPROM • Max. Clock 5 MHz • Low-power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 5 MHz - Read Current: 5 mA at 5.5V, 5 MHz - Standby Current: 10 μA at 5.5V • 1024 x 8 through 32768 x 8-bit Organization • Byte and Page-level Write Operations • Se |
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Microchip |
Bus Serial EEPROM • Low-power CMOS technology: - Write current: 3 mA maximum - Read current: 500 µA typical - Standby current: 500 nA typical • 4096 x 8 bit organization • 32 byte page • Write cycle time: 5 ms maximum • Self-timed erase and write cycles • Bl |
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Microchip |
8K SPI Bus Serial EEPROM • Max. clock 10 MHz • Low-power CMOS technology • 1024 x 8-bit organization • 16 byte page (‘A’ version devices) • 32 byte page (‘B’ version devices) • Write cycle time: 5 ms max. • Self-timed ERASE and WRITE cycles • Block write protection |
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Microchip |
64K SPI Bus Serial EEPROM • Max. Clock 10 MHz • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 10 MHz - Read Current: 5 mA at 5.5V, 10 MHz - Standby Current: 1 A at 5.5V • 8192 x 8-bit Organization • 32 Byte Page • Self-Timed Erase and Write Cycles ( |
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Microchip Technology |
EEPROM • Max. Clock 10 MHz • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 10 MHz - Read Current: 6 mA at 5.5V, 10 MHz - Standby Current: 1 A at 5.5V • 32,768 x 8-bit Organization • 64-Byte Page • Self-Timed Erase and Write Cycles |
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Microchip Technology |
(25LC0x0A) 1K-4K SPI Serial EEPROM High Temp Family Data Sheet • Max. Clock 5 MHz • Low-Power CMOS Technology: - Max. Write Current: 5 mA at 5.5V, 5 MHz - Read Current: 5 mA at 5.5V, 5 MHz - Standby Current: 10 μA at 5.5V • 128 x 8 through 512 x 8-bit Organization • Byte and Page-level Write Operations • Self-T |
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Microchip |
16-Kbit SPI Bus Serial EEPROM • 10 MHz Maximum Clock Speed • Low-Power CMOS Technology: - Maximum Write current: 5 mA at 5.5V - Read current: 5 mA at 5.5V, 10 MHz - Standby current: 5 µA at 5.5V • 2048 x 8-bit Organization • 16-Byte Page (“C” version devices) • 32-Byte Pa |
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Microchip |
16-Kbit SPI Bus Serial EEPROM • 10 MHz Maximum Clock Speed • Low-Power CMOS Technology: - Maximum Write current: 5 mA at 5.5V - Read current: 5 mA at 5.5V, 10 MHz - Standby current: 5 µA at 5.5V • 2048 x 8-bit Organization • 16-Byte Page (“C” version devices) • 32-Byte Pa |
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Desde 2024. D4U Semiconductor.
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