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ST Microelectronics |
High voltage NPN Power transistor ■ State-of-the-art technology: – diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement ■ Tight hFE range at operating collector current ■ Fully insulated power package U.L. c |
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STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS tance Junction-case Max 5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = rat |
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STMicroelectronics |
Low voltage NPN power transistors ■ Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain per |
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Micro Electronics |
1.3 m D2300-Type Laser Isolated DFB Laser Module s s s Integrated optical isolator SONET/SDH compatible up to OC-48/STM-16 High-performance, distributed-feedback (DFB) laser High optical power available Industry-standard, 14-pin butterfly package Characterized at 2.488 Gbits/s (NRZ) Wide operating |
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STMicroelectronics |
SILICON PNP TRANSISTOR itions V CB = -45 V V CB = -45 V V EB = -5 V I C = -100 mA I C = -1 A I C = -1 A I C = -150 mA I C = -1 A I C = -250 mA I C = -150 mA I B = -0.1 A V CE = -2 V V CE = -2 V V CE = -2 V V CE = -10 V V CE = -2 V 40 25 3 1.6 MHz -45 -0.6 -1.3 T c = 150 C |
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STMicroelectronics |
Low voltage NPN power transistors ■ Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching applications Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain per |
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STMicroelectronics |
Low voltage PNP power transistor ■ Low saturation voltage ■ PNP transistor )Applications t(s ■ Audio, power linear and switching applications roducDescription PThe device is manufactured in planar technology tewith “Base Island” layout. The resulting transistor shows exceptional h |
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STMicroelectronics |
NPN power transistor ■ NPN transistor Applications ■ General purpose switching and amplifier transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with ve |
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SGS-Thomson Microelectronics |
(TSD035 - TSD1235) Asymmetrical Thyristor |
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Micro Electronics |
1.3 m D2300-Type Laser Isolated DFB Laser Module s s s Integrated optical isolator SONET/SDH compatible up to OC-48/STM-16 High-performance, distributed-feedback (DFB) laser High optical power available Industry-standard, 14-pin butterfly package Characterized at 2.488 Gbits/s (NRZ) Wide operating |
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ST Microelectronics |
ELECTRONIC CIRCUIT BREAKER a definitive shutdown of the circuit is done if the shortcircuit or over current persists over an externally adjustable time, until the TD230 is reset by temporary INHIBIT signal or temporary switching off of the power supply (hot disconnection/reco |
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ST Microelectronics |
ELECTRONIC CIRCUIT BREAKER a definitive shutdown of the circuit is done if the shortcircuit or over current persists over an externally adjustable time, until the TD230 is reset by temporary INHIBIT signal or temporary switching off of the power supply (hot disconnection/reco |
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Desde 2024. D4U Semiconductor.
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