| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Shengbang Microelectronics |
Dual Rail-to-Rail I/O Precision Operational Amplifier The SGM8552 is a dual rail-to-rail input and output precision operational amplifier which has low input offset voltage, and bias current. It is guaranteed to operate from 2.5V to 5.5V single supply. The rail-to-rail input and output swings provided |
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Micro Electronics |
GENERAL DESCRIPTION |
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ST Microelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS 0 25 3.5 0.5 20.6 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 8.5 °C/W 1/3 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com SD1855 (TCC20L25) ELECTRICAL SPECIFI |
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Analog Microelectronics |
600mA CMOS Regulator l Low Dropout Voltage: 420mV@600mA l Guaranteed Current: 600mA l Quiescent Current: 60µA (typ.) l Over-Temperature Shutdown l Current Limiting protection l PSRR:60dB@10KHz l Ultra-Low-Noise: 100µVRMS at 1Hz to 100KHz l Low Temperature Coefficient l I |
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STMicroelectronics |
general-purpose operational amplifier • Low power consumption: 180 µA max at 5 V • Low power shutdown mode: 50 nA max • Low offset voltage: 0.8 mV max at 25 °C • Tiny packages • Extended temperature range: -40 °C to 125 °C • Low supply voltage: 2.3 V - 5.5 V • Gain bandwidth product: 1.3 |
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SILAN MICROELECTRONICS |
PRIMARY SIDE CONTROL SMPS * Primary side control * Low start-up current * Leading edge blanking * Pulse-Frequency Modulation(PFM) * Overvoltage protection * Undervoltage lockout * Over temperature protection * Cycle by cycle current limiting * Open loop protection * High vol |
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Shengbang Microelectronics |
Single Rail-to-Rail I/O Precision Operational Amplifier The SGM8551 is a single rail-to-rail input and output precision operational amplifier which has low input offset voltage, and bias current. It is guaranteed to operate from 2.5V to 5.5V single supply. The rail-to-rail input and output swings provide |
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Shengbang Microelectronics |
Quad Rail-to-Rail I/O Precision Operational Amplifier Low Offset Voltage: 12μV (TYP) Rail-to-Rail Input and Output Swing 2.5V to 5.5V Single Supply Operation Voltage Gain: 145dB (TYP) at +5V PSRR: 110dB (TYP) CMRR: 105dB (TYP) Ultra Low Input Bias Current: 10pA Low Supply Current: 465μA/ |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODE rameter Unit August 1998 - Ed: 2A 1/3 PFR850 -> 856 THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead lengh. STATIC ELECTRICAL CHARACTERISTICS Synbol IR Tj = 25°C Tj = 100 |
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STMicroelectronics |
FAST RECOVERY RECTIFIER DIODES 854S 400 450 856S 600 650 Unit V V THERMAL RESISTANCE Symbol Rth (j - a) Junction-ambient* Parameter Value 25 Unit °C/W * On infinite heatsink with 10mm lead length. August 1996 - Ed: 1 1/3 PFR 850S → 856S ELECTRICAL CHARACTERISTICS STATIC CHA |
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STMicroelectronics |
LOUDSPEAKER & HEADSET DRIVER |
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SamHop Microelectronics |
P-Channel E nhancement Mode Field Effect Transistor mal R esistance, Junction-to-Ambient 1 R JC 1 R JA 3 50 C /W C /W S T U/D1855P L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, I |
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SamHop Microelectronics |
P-Channel E nhancement Mode Field Effect Transistor esistance, Junction-to-Ambient 1 R JC 1 R JA 3 50 C /W C /W S TU/D1855PLS ELECTRICAL CHARACTERISTICS (TA 25 C unless = otherwise noted) Parameter OFF CHARACTERISTICS 5 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakag |
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Analog Microelectronics |
Voltage Detector l Highly accurate: + 2% l Low power consumption: TYP 0.8µA (VDD=1.5V) l Detect voltage range: 1.6V to 6.0V in 0.1V increments l Operating voltage range: 1.2V to 6.5V l Detect voltage temperature characteristics: TYP ±100ppm/oC l Output configuration: |
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Analog Microelectronics |
600mA CMOS Regulator l Low Dropout Voltage: 420mV@600mA l Guaranteed Current: 600mA l Quiescent Current: 60µA (typ.) l Over-Temperature Shutdown l Current Limiting protection l PSRR:60dB@10KHz l Ultra-Low-Noise: 100µVRMS at 1Hz to 100KHz l Low Temperature Coefficient l I |
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SILAN MICROELECTRONICS |
PRIMARY SIDE CONTROL SMPS * Primary side control * Low start-up current * Leading edge blanking * Pulse-Frequency Modulation(PFM) * Overvoltage protection * Undervoltage lockout * Over temperature protection * Cycle by cycle current limiting * Open loop protection * High vol |
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SILAN MICROELECTRONICS |
PRIMARY SIDE CONTROL SMPS * Primary side control * Low start-up current * Leading edge blanking * Pulse-Frequency Modulation(PFM) * Overvoltage protection * Undervoltage lockout * Over temperature protection * Cycle by cycle current limiting * Open loop protection * High vol |
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SamHop Microelectronics |
P-Channel E nhancement Mode Field Effect Transistor mal R esistance, Junction-to-Ambient 1 R JC 1 R JA 3 50 C /W C /W S T U/D1855P L E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, I |
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SamHop Microelectronics |
P-Channel E nhancement Mode Field Effect Transistor esistance, Junction-to-Ambient 1 R JC 1 R JA 3 50 C /W C /W S TU/D1855PLS ELECTRICAL CHARACTERISTICS (TA 25 C unless = otherwise noted) Parameter OFF CHARACTERISTICS 5 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakag |
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STMicroelectronics |
general-purpose operational amplifier • Low power consumption: 180 µA max at 5 V • Low power shutdown mode: 50 nA max • Low offset voltage: 0.8 mV max at 25 °C • Tiny packages • Extended temperature range: -40 °C to 125 °C • Low supply voltage: 2.3 V - 5.5 V • Gain bandwidth product: 1.3 |
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Desde 2024. D4U Semiconductor.
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