Micro Electronics 2N4 Hoja de datos

No.	parte #	Fabricante	Descripción
1	2N4029	Micro Electronics	PNP SILICON TRANSISTOR
2	2N4059	Micro Electronics	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
3	2N4033	STMicroelectronics	Silicon Planar Epitaxial PNP Transistor . Max. -50 -50 Un it nA µA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ V BE(s at)∗ hFE∗ Collector-Emitter Satu
4	2N4030	Micro Electronics	PNP Silicon Transistor
5	2N4237	Micro Electronics	NPN Transistor
6	2N4032	Micro Electronics	PNP Silicon Transistor
7	2N4031	Micro Electronics	PNP Silicon Transistor
8	2N4014	STMicroelectronics	Silicon Planar Epitaxial transistor (T a mb = 25 °C unless otherwise specified) Symbol I CBO V( BR)CB O Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (V BE = 0) Collector-Emitter Breakdown Voltage (I B = 0) E
9	2N4036	STMicroelectronics	Silicon Planar Epitaxial PNP Transistor CB O V ( BR) CEX * V (BR)CE R * V (BR)CE O * V (B R)E BO V CE( sat )* VB E * h F E* Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (I B = 0) Emitter Cutoff Current (I C = 0) Collector-base Breakdown Voltage (I E = 0) Collector-
10	2N4058	Micro Electronics	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
11	2N4060	Micro Electronics	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
12	2N4062	Micro Electronics	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
13	2N4238	Micro Electronics	NPN Transistor
14	2N4427	STMicroelectronics	Silicon Planar NPN Transistor
15	2N4036	Micro Electronics	PNP Transistor
16	2N4037	Micro Electronics	COMPLEMENTARY SILICON TRANSISTORS
17	2N4061	Micro Electronics	NPN/PNP SILICON AF SMALL SIGNAL TRANSISTORS
18	2N4234	Micro Electronics	PNP Transistor
19	2N4235	Micro Electronics	PNP Transistor
20	STK32N4LLH5	STMicroelectronics	Power MOSFET Type STK32N4LLH5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)Qg 40 V < 0.0025 Ω 106.4nCmΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully enc