Maple Semiconductor MSP Hoja de datos

No.	parte #	Fabricante	Descripción
1	MSP10065V1	Maple Semiconductor	Silicon Carbide Diode -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power
2	MSP02120V1	Maple Semiconductor	Silicon Carbide Diode -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Powe
3	MSP06065V1	Maple Semiconductor	Silicon Carbide Diode -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power
4	MSP08065V1	Maple Semiconductor	Silicon Carbide Diode -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power
5	MSP10120V1	Maple Semiconductor	Silicon Carbide Diode -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Powe
6	MSP16065V1	Maple Semiconductor	Silicon Carbide Diode -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power
7	MSP05120V1	Maple Semiconductor	Silicon Carbide Diode -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Powe
8	MSP120N08G	Maple Semiconductor	80V N-Channel MOSFET - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol