| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Maple Semiconductor |
Silicon Carbide Diode -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Applications -Switch Mode Power |
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Maple Semiconductor |
80V N-Channel MOSFET - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise |
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Desde 2024. D4U Semiconductor.
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