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MagnaChip |
N-Channel MOSFET - VDS = 24 V - ID =10 A - Drain-Source ON Resistance; RDS(ON) < 11.6mΩ @ VGS = 4.5V RDS(ON) < 12.6mΩ @ VGS = 4.0V RDS (ON) < 15.0mΩ @ VGS = 3.5V RDS (ON) < 17.5mΩ @ VGS = 3.1V Applications - Portable Battery Protection Module 5(D) 6(D) 7(D) 8(D) 4(G |
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MagnaChip |
Common-Drain N-Channel Trench MOSFET VDS = 30V ID = 8.0A @VGS = 10V RDS(ON) < 20mΩ @VGS = 10V < 23mΩ @VGS = 4.5V Applications Unidirectional or Bi-directional Load Switch Lithium-Ion Battery Packs Portable Battery Protection Module D1 D2 1(D1) 2(S1) 3(S1) 4(G1) 8(D2) 7(S |
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MagnaChip |
N-Channel Trench MOSFET à VDS = 24V à ID = 7.0A @VGS = 10V à RDS(ON) < 23mΩ @VGS = 4.5V < 24mΩ @VGS = 3.9V < 35mΩ @VGS = 2.5V Applications à Unidirectional or Bi-directional Load Switch à Lithium-Ion Battery Packs à Portable Battery Protection Module 5(D) 6(D) 7(D) 8(D) 4( |
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Desde 2024. D4U Semiconductor.
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