| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Macronix International |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY • 2.7V to 3.6V operation voltage • Block Structure - 32 x 128Kbyte Erase Blocks (32M) - 64 x 128Kbyte Erase Blocks (64M) - 128 x 128Kbyte Erase Blocks (128M) • Fast random / page mode access time - 120/25 ns Read Access Time (32M) - 120/25 ns Read Ac |
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Macronix International |
1M-BIT [128K x 8] CMOS FLASH MEMORY |
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Macronix International |
2M-BIT [256K x 8] CMOS FLASH MEMORY • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120 ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture – Byte Programming |
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Macronix International |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 7% • Command register architecture – Byte/Word Programming |
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Macronix International |
MX28F1000 |
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Macronix International |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY • 2.7V to 3.6V operation voltage • Block Structure - 32 x 128Kbyte Erase Blocks (32M) - 64 x 128Kbyte Erase Blocks (64M) - 128 x 128Kbyte Erase Blocks (128M) • Fast random / page mode access time - 120/25 ns Read Access Time (32M) - 120/25 ns Read Ac |
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Macronix International |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY • 2.7V to 3.6V operation voltage • Block Structure - 32 x 128Kbyte Erase Blocks (32M) - 64 x 128Kbyte Erase Blocks (64M) - 128 x 128Kbyte Erase Blocks (128M) • Fast random / page mode access time - 120/25 ns Read Access Time (32M) - 120/25 ns Read Ac |
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Macronix International |
2M-BIT [256K x 8] CMOS FLASH MEMORY • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption – 50mA maximum active current – 100uA maximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture – Byte Programming (1 |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Macronix International |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Bit Organization: 4,194,304 x 16 • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VCCQ=2.7~3.6V - Operating temperature:-40° C~85° C • Fast access time : 90/120ns • Low power consumption - 9mA maximu |
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Desde 2024. D4U Semiconductor.
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