No. | parte # | Fabricante | Descripción | Hoja de Datos |
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MacMic |
MOSFET □ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter T |
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MacMic |
MOSFET □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ Hig |
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MacMic |
100V 400A N-ch Power MOSFET □ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High |
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MacMic |
60V 400A N-ch Power MOSFET □ RDS(ON).typ=0.35mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ Hig |
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MacMic |
MOSFET □ N-channel,very low on-resistance RDS(on) □ 175℃operating temperature □ Solderable pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies INVERTER SECTOR ABSOLUTE MAXI |
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MacMic |
MOSFET ƶ Proprietary New Trench Technology ƶ RDS(ON).typ=1.5mȍ@VGS=10V ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery Schottky Diode ƶ10K ȍ Gate Protected Resistance Inside ƶ Inside the module,each MOSFET chip has a gate resistance:10ȍ APPLICATI |
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MacMic |
MOSFET ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant A |
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MacMic |
MOSFET □ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High |
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MacMic |
100V 1000A N-ch Power MOSFET ƶ RDS(ON).typ=0.57mȍ@VGS=10V ƶ 175ćoperating temperature ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery body Diode ƶ 10K ȍ Gate Protected Resistance Inside MMN1000DB010B 100V 1000A N-ch Power MOSFET Module Preliminary RoHS Compliant A |
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MacMic |
100V 668A N-ch Power MOSFET □ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High |
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MacMic |
150V 600A N-ch Power MOSFET □ RDS(ON).typ=1.8mΩ@VGS=10V □ 175℃ junction temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter T |
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MacMic |
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