| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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MOS-TECH |
P-Channel Enhancement Mode Field Effect Transistor Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, Tstg Parameter Drai |
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MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TSSOP-8 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 6A 20 @ VGS=4.5V 28 @ VGS=2.5V NOTE：The MT8205A is available in a lead-free package |
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MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TSOP6 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 4A 21@ VGS=4.5V 35@ VGS=2.5V NOTE：The MT8205 is available in a lead-free package ABSOL |
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MOS-TECH |
Dual N-Channel Power MOSFET ! 7.1A, 20V rDS(ON) =0.0Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profil |
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Desde 2024. D4U Semiconductor.
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