| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
MOS-TECH |
N-Channel Power MOSFET • RDS(on) = 3.6mΩ ( Typ.)@ VGS = 10V, ID = 100A • High performance trench technology for extermly low RDS(on) • High power and current handing capability • RoHS compliant Description • This N-Channel MOSFET is produced using MOS-TECH Semiconductor |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. SOT-23-3L Package. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Sour |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -5.6A 45@ VGS=-10V 65 @ VGS=-4.5V NOTE：The MT3401 is available in a lead-free package |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 2.5A 70 @ VGS=10V 105@ VGS=4.5V NOTE：The MT3402 is available in a lead-free package D |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET N-Channel Power® MOSFET 55V, 110A, 7.2mΩ Description • This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior swit |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -2.0A 130@ VGS=-10V 150 @ VGS=-4.5V NOTE：The MT3405 is available in a lead-free pack |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET • A, 30 V. RDS(ON)= 0.0 Ω @ VGS = 10 V RDS(ON)= 0.06 Ω @ VGS = 4.5 V • Very fast switching speed. • Low gate charge (5nC typical) • High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher pow |
|
|
|
|
MOS-TECH |
N-Channel Powe MOSFET • RDS(on) = mΩ ( Typ.) @ VGS = 10V, ID = 5A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant Application • DC to DC convertors / Sy |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET • –4.3 A, –25 V. RDS(ON) = 0.08 Ω @ VGS = –4.5 V RDS(ON) = 0.11 Ω @ VGS = –2.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely low RDS(ON) • SuperSOTTM -23 provides low RDS(ON) and 30% higher power handling cap |
|
|
|
|
Mos-Tech |
N-Channel Power MOSFET R DS(on) = 5.5m : ( Typ.)@ VGS= 10V, ID= 30A +LJKSHUIRUPDQFHWUHQFKWHFKQRORJ\IRUH[WUHPHO\ORZ R '6 21 +LJKSRZHUDQGFXUUHQWKDQGOLQJFDSDELOLW\ RoHS compliant D G S $SSOLFDWLRQV Power Management in Inverter system Synchronous Re |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET • RDS(on) = 3mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant Description This N-Channel MOSFET is p |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET • RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A • Low gate charge(Typ. 57nC) • Low Crss(Typ. 145pF) • Fast switching • Improved dv/dt capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced |
|
|
|
|
MOS-TECH |
P-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252-5L package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -30A 28@ VGS=-10V 35 @ VGS=-4.5V NOTE：The MT301 is available in a lead-free packag |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 30V 30A 11@ VGS=10V 17@ VGS=4.5V NOTE：The MT50N03 is available in a lead-free package ABS |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 25V 15A 55 @ VGS=4.5V 60 @ VGS=2.5V NOTE：The MT3055L is available in a lead-free package |
|
|
|
|
MOS-TECH |
N-Channel Powe MOSFET • Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extr emely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MO |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET • rDS(ON) = 4.5mΩ, VGS = 10V, ID = 10A • rDS(ON) = 6.0mΩ, VGS = 4.5V, ID = 10A • High performance t rench t echnology for ext remely low rDS(ON) • Low gate charge • High power and current handling capability (FLANGE) DRAIN SOURCE DRAIN GATE G TO- |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET • RDS(on) = .4mΩ (Typ.)@ VGS = 10V, ID = 80A • Qg(tot) = nC (Typ.)@ VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • RoHS Compliant Application • Automotive Engine Control • Powertrain M |
|
|
|
|
MOS-TECH |
N-Channel Power MOSFET • 50A, 60V, RDS(on) = 11.2mΩ @VGS = 10 V • Low gate charge ( typical 43 nC) • Low Crss ( typical 85 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Ra |
|
Desde 2024. D4U Semiconductor.
|