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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● PA switch ● Load switch ● Power management PIN |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ●PWM applications ●Lo |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management Lead Free |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management PIN Confi |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ●PWM applications ●Load switch ●Power management |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS =-40V,ID =-70A RDS(ON) <10mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special pro |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -3.9A RDS(ON) <70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PA switch ● Load switch ● Power management Lead Free PIN |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -2.0A RDS(ON) < 130mΩ @ VGS=-10V RDS(ON) < 180mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● PWM applications ● Load switch ● Power manage |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -4.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Lead Free Application ● PWM applications ● Load switch ● Power manageme |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●Battery Switch ●Load switch ●Power management PIN Configurat |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management PIN Conf |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -4.1A RDS(ON) <75mΩ @ VGS=-2.5V RDS(ON) < 52mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management PIN Confi |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -12V,ID = -4.1A RDS(ON) < 60mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management PIN Conf |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch PIN Configuration Lead F |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS =-40V,ID =-5.3A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Lead Free Application ● Power |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Lead Free Application ● Power |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Lead Free Application ● Power |
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MORESEMI |
P-Channel Enhancement Mode Power MOSFET ● VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Lead Free Application ● Power s |
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Desde 2024. D4U Semiconductor.
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