| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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MORESEMI |
Dual N-Channel MOSFET ● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching applicat |
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MORESEMI |
P & N-Channel Power MOSFET |
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MORESEMI |
Dual N-Channel MOSFET ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Application ● Power switching application ● Hard switched and high f |
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MORESEMI |
Dual P-Channel MOSFET ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management Lead Fr |
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MORESEMI |
Dual P-Channel Enhancement Mode Power MOS FET ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ● Motor drive ● Load switch ● Power management PI |
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MORESEMI |
Dual N-Channel Enhancement Mode Power MOS FET ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ●Battery protection ●Load switch ●Power management PIN |
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MORESEMI |
Dual N-Channel Enhancement Mode Power MOS FET ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management PIN Configura |
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MORESEMI |
Dual N-Channel MOSFET ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ●PWM application |
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MORESEMI |
Dual P-Channel MOSFET ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ● Motor drive ● Load switch ● Power management P |
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MORESEMI |
Dual N-Channel MOSFET ● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD proteted Application ●PWM application ●Load switch |
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MORESEMI |
P & N-Channel Power MOSFET ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -60V,ID = -5A RDS(ON) < 80mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment SOP-8 t |
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MORESEMI |
Dual N-Channel Enhancement Mode Power MOS FET ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Application ● Power switching application ● Hard switched and high f |
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MORESEMI |
Dual N-Channel MOSFET ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch PIN Configura |
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MORESEMI |
Dual N-Channel MOSFET ● VDS =20V,ID =6A RDS(ON) < 28m Ω @ VGS=4.5V RDS(ON) < 37mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Lead Free Application ● Power switching application ● Hard switched and high f |
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MORESEMI |
Dual N-Channel MOSFET ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● ESD protected Application ●PWM application ●Load switch |
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MORESEMI |
Dual N-Channel MOSFET ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ● PWM application |
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MORESEMI |
Dual P-Channel MOSFET ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management Lead Fr |
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MORESEMI |
N/P-Channel Power MOSFET ● N-Channel VDS = 20V,ID = 3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V Lead Free ● High power and current handing capability ● Lead free product is a |
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Desde 2024. D4U Semiconductor.
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