| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test Applications： Automotive,DC Motor Control and Class D Amplif |
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Huajing Microelectronics |
Silicon N-Channel Power MOSFET l Trench FET Power MOSFET l Low ON Resistance(Rdson≤6mΩ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:291pF) l 100% Single Pulse avalanche energy Test Applications： Automotive,DC Motor Control and Class D Amplif |
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ST Microelectronics |
RAIL TO RAIL CMOS QUAD OPERATIONAL AMPLIFIER WITH STANDBY POSITION : TS902. April 1999 TS904I/AI PIN CONNECTIONS (top view) Output 1 Inverting Input 1 Non-inve rting input 1 V CC + Non-inve rting Input 2 Inve rting Input 2 Output 2 S tandby 1 1 2 3 4 5 6 7 8 16 Output 4 Inverting Input 4 Non-inverting input 4 |
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ST Microelectronics |
RAIL TO RAIL CMOS DUAL OPERATIONAL AMPLIFIER WITH STANDBY POSITION : TS904. April 1999 Standby 1 Output 1 2 14 13 12 V CC+ Output 2 N.C. Inverting Input 2 Non-inverting Input 2 N.C. V CC - N.C. 3 Inverting Input 1 Non-inverting input 1 N.C. 4 5 6 + + 11 10 9 8 N.C. 7 1/12 TS902 SCHEMATIC DIAGRAM (1/2 TS902 |
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MICRO ELECTRONICS |
NPN epitaxial silicon planar transistor Transition frequency 150 Collector to Base Capacitance 1000 0.3 0.85 0.1 V V V V V μA 6 pF Ic=1mA Vce=5V Ic=100mA Ib=10mA Ic=1mA VCE=5V Ic=1mA Ib=0 Ic=100μA Ie=0 Ie=100μA Ic=0 Vcb=50V Ie=0 Ic=10mA Vce=5V f=30MH Z Vcb=10V Ic=0 f=1MH Z Note: H |
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STMicroelectronics |
16 MHz STM8S 8-bit MCU Core • 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline • Extended instruction set Memories • Program memory: 8 Kbyte Flash; data retention 20 years at 55 °C after 10 kcycle • Data memory: 640 byte true data EEPROM; endurance |
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STMicroelectronics |
16 MHz STM8S 8-bit MCU Core • 16 MHz advanced STM8 core with Harvard architecture and 3-stage pipeline • Extended instruction set Memories • Program memory: 8 Kbyte Flash; data retention 20 years at 55 °C after 10 kcycle • Data memory: 640 byte true data EEPROM; endurance |
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Desde 2024. D4U Semiconductor.
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