No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Melexis Microelectronic Systems |
Hall Latch and Benefits Wide operating voltage range from 3.5V to 24V High magnetic sensitivity – Multi-purpose CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output Thin SOT23 3L and flat TO-92 3L both RoHS |
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TAIWAN SEMICONDUCTOR |
1.0AMP High Efficient Surface Mount Rectifiers Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low pow |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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General Semiconductor |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junctions ♦ Low profile package ♦ Easy pick and place ♦ Ultrafast recovery times for high efficiency ♦ Low forwar |
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Inchange Semiconductor |
Silicon NPN Power Transistor 33/A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUS133 BUS133A IC= 0.1A ; IB= 0; L= 10mH 450 500 V VCE(sat)-1 Collector-Emitte |
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Inchange Semiconductor |
Silicon NPN Power Transistor SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ; IB= 0; L= 10mH 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.5 V VCE(sat)-2 Collector-Emitter Saturation Vol |
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Mitsubishi Electric Semiconductor |
Silicon MOSFET Power Transistor High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz, 520MHz High Efficiency: 65%typ. (175MHz) High Efficiency: 65%typ. (520MHz) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm www.Da |
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MIC |
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER |
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Fairchild Semiconductor |
Super Fast Surface Mount Rectifiers • Glass Passivated Chip Junction • Low Power Loss, High Efficiency • Fast Switching Reverse Recovery Time: 50~75 ns Maximum • High Surge Capacity • UL Flammability 94V-0 Classification • MSL 1 per J-STD-020 • RoHS Compliant / Green Molding Compound • |
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Fairchild Semiconductor |
Super Fast Surface Mount Rectifiers • Glass Passivated Chip Junction • Low Power Loss, High Efficiency • Fast Switching Reverse Recovery Time: 50~75 ns Maximum • High Surge Capacity • UL Flammability 94V-0 Classification • MSL 1 per J-STD-020 • RoHS Compliant / Green Molding Compound • |
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Fairchild Semiconductor |
IGBT • Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.6 V @ IC = 50A • High Input Impedance • Fast & Soft Anti-Parallel FWD • UL Certified No.E209204 Application • AC & DC Motor Control |
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MIC |
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER |
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MIC |
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER |
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MIC |
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER |
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MIC |
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER |
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MIC |
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER |
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MIC |
SURFACE MOUNT ULTRA FAST RECOVERY RECTIFIER |
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General Semiconductor |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junctions ♦ Low profile package ♦ Easy pick and place ♦ Ultrafast recovery times for high efficiency ♦ Low forwar |
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General Semiconductor |
SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junctions ♦ Low profile package ♦ Easy pick and place ♦ Ultrafast recovery times for high efficiency ♦ Low forwar |
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