| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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MIC |
SCHOTTKY BARRIER RECTIFIER ▪ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ▪ Metal silicon junction ,majority carrier conduction ▪ Guard ring for overvoltage protection ▪ Low power loss ,high efficiency ▪ High current capability ,Low forward vol |
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Rectron Semiconductor |
SCHOTTKY BARRIER RECTIFIER * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability MECHANICAL DATA * Case: ITo-220 molded plastic * Epoxy: Device has UL flammabil |
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Rectron Semiconductor |
SCHOTTKY BARRIER RECTIFIER * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * High switching capability * High surge capabitity * High reliability MECHANICAL DATA * Case: ITo-220 molded plastic * Epoxy: Device has UL flammabil |
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MIC |
SCHOTTKY BARRIER RECTIFIER ▪ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ▪ Metal silicon junction ,majority carrier conduction ▪ Guard ring for overvoltage protection ▪ Low power loss ,high efficiency ▪ High current capability ,Low forward vol |
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Microsemi |
Rad Hard NPN Silicon High Speed Switching Transistor JEDEC registered 2N2369 TID level screened per MIL-PRF-19500 Also available with ELDRS testing to 0.01 Rad(s)/ sec MKCR / MHCR chip die available RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec d |
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STMicroelectronics |
FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2 automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2M works even at very low duty-cycle values |
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XYH SEMICONDUCTOR |
SCHOTTKY BARRIER RECTIFIER 05(5.20) 0.195(4.95) 0.022(0.58) 0.014(0.35) Characteristic Symbol Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at Tc=125 Peak forward surge current 8.3ms singl |
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MIC |
SCHOTTKY BARRIER RECTIFIER • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MILS-19500/228 • Low power loss, high efficiency • Low forward voltage, high current |
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STMicroelectronics |
FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2P automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2PM works even at very low duty-cycle valu |
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Microsemi |
Rad Hard PNP Silicon Switching Transistor JEDEC registered 2N2907A TID level screened per MIL-PRF-19500 Also available with ELDRS testing to 0.01 Rad(s)/ sec MKCR/MHCR chip die available RHA (Radiation hardness assured) lot by lot validation testing via ELDR 0.1 Rad (SI)/sec dose |
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ON Semiconducto |
Schottky Barrier Diode http://onsemi.com • • • • • • • Very Low Forward Voltage Drop − 550 mV @ 2.0 A Low Reverse Current − 15 mA @ 10 V VR 2.0 A of Continuous Forward Current Power Dissipation of 665 mW with Minimum Trace ESD Rating − Human Body Model: Class 3B ESD Rat |
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Fairchild Semiconductor |
Switching Application Input Resistor Resistor Ratio Test Condition IC= -10µA, IE=0 IC= -100µA, IB=0 VCB= -40V, IE=0 VCE= -5V, IC= -5mA IC= -10mA, IB= -0.5mA VCE= -10V, IC= -5mA VCB= -10V, IE=0 f=1.0MHz VCE= -5V, IC= -100µA VCE= -0.3V, IC= -5mA 15 0.9 22 1 -0.5 -3.0 29 1. |
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ON Semiconductor |
Schottky Barrier Diode • Very Low Forward Voltage Drop − 480 mV @ 2.0 A • Low Reverse Current − 20 mA @ 10 V VR • 2.0 A of Continuous Forward Current • Power Dissipation of 665 mW with Minimum Trace • ESD Rating − Human Body Model: Class 3B ESD Rating − Machine Model: Clas |
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Naina Semiconductor |
Standard Recovery Diodes Diffused Series Industrial grade Available in Normal and Reverse polarity Metric and UNF thread type Electrical Specifications (TA = 25oC, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TC = |
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MIC |
SCHOTTKY BARRIER RECTIFIER ▪ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ▪ Metal silicon junction ,majority carrier conduction ▪ Guard ring for overvoltage protection ▪ Low power loss ,high efficiency ▪ High current capability ,Low forward vol |
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Samsung semiconductor |
PNP Epitaxial Silicon Transistor |
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Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
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Samsung semiconductor |
PNP (SWITCHING APPLICATION) |
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STMicroelectronics |
FORWARD SYNCHRONOUS RECTIFIERS SMART DRIVER makes discontinuous conduction mode possible and prevents the freewheeling mosfet from sinking current from the output. STSR2P automatically turns off the outputs when duty-cycle is lower than 13%, while STSR2PM works even at very low duty-cycle valu |
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Naina Semiconductor |
Standard Recovery Diodes • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type Electrical Specifications (TE = 250C, unless otherwise noted) Symbol Parameters Values Units IF(AV) Maximum avg. forward current @ TE = |
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Desde 2024. D4U Semiconductor.
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