| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Taiwan Semiconductor |
N-Channel Power MOSFET ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ● RoHS Compliant ● Halogen-Free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RD |
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Touchstone Semiconductor |
(TSM9117 - TSM9120) 1.6V Nanopower Comparators ♦ Second-source for MAX9117-MAX9120 ♦ Guaranteed to Operate Down to +1.6V ♦ Ultra-Low Supply Current 350nA - TSM9119/TSM9120 600nA - TSM9117/TSM9118 ♦ Internal 1.252V ±1.75% Reference ♦ Input Voltage Range Extends 200mV Outside-the-Rails ♦ No Phase R |
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RF Micro Devices |
QUAD-BAND/GSM850/EGSM900/DCS/PCS/POWER AMPLIFIER MODULE Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53% Auto VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Integrated Power Flattening Circuit Reduces Power and Current into Mismatch Integrated VRAMP Rejection Filt |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE • Complete Power Control Solution • Single 3.0V to 5.5V Supply Voltage • +35dBm GSM Output Power at 3.5V • +33dBm DCS/PCS Output Power at 3.5V SiGe Bi-CMOS 12 DCS/PCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VREG 5 VRAMP 6 GSM850/GSM900 IN 7 8 VCC2 9 |
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RF Micro Devices |
DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE GND 1 22 21 20 19 Enhanced Performance Transmit Module No External Routing High Efficiency at rated POUT VBATT =3.5V GSM850 42% PCS1900 38% Low RX Insertion Loss Symmetrical RX Ports 0dBm to 6dBm Drive Level, >50dB of Dyn |
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Touchstone Semiconductor |
(TSM9117 - TSM9120) 1.6V Nanopower Comparators ♦ Second-source for MAX9117-MAX9120 ♦ Guaranteed to Operate Down to +1.6V ♦ Ultra-Low Supply Current 350nA - TSM9119/TSM9120 600nA - TSM9117/TSM9118 ♦ Internal 1.252V ±1.75% Reference ♦ Input Voltage Range Extends 200mV Outside-the-Rails ♦ No Phase R |
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Touchstone Semiconductor |
(TSM9117 - TSM9120) 1.6V Nanopower Comparators ♦ Second-source for MAX9117-MAX9120 ♦ Guaranteed to Operate Down to +1.6V ♦ Ultra-Low Supply Current 350nA - TSM9119/TSM9120 600nA - TSM9117/TSM9118 ♦ Internal 1.252V ±1.75% Reference ♦ Input Voltage Range Extends 200mV Outside-the-Rails ♦ No Phase R |
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MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Glass passivated junction • Low inductance surge resistance • Fast response time: typical less than 1.0ps from 0 volts to V(BR) for u |
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Taiwan Semiconductor |
N-Channel Power MOSFET ● 100% UIS and Rg tested ● Logic-level gate drive ● Fast switching ● RoHS Compliant ● Halogen-Free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Solenoid and Motor Drivers PRODUCT SUMMARY PARAMETER VALUE VDS 60 VGS = 10V 90 RD |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE • Integrated VREG • Complete Power Control Solution • +35dBm GSM Output Power at 3.5V DCS/PCS IN 37 BAND SELECT 40 TX ENABLE 41 VBATT 42 VBATT 43 VRAMP 45 GSM IN 48 Fully Integrated Power Control Circuit 31 DCS/PCS OUT • +33dBm DCS/PCS Output Powe |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE Ultra-Small, Ultra-Thin 6mmx6mmx1mm Package Size Integrated VREG Complete Power Control Solution Large Signal Polar Modulation EDGE Compatible No External Components or Routing Improved Power Flatness through Integrated Current Limiter. 2.5A |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE • VRAMP Limiter • Complete Power Control Solution • +35dBm GSM Output Power at 3.5V DCS/PCS IN 37 BAND SELECT 40 TX ENABLE 41 VBATT 42 VBATT 43 VRAMP 45 GSM IN 48 Fully Integrated Power Control Circuit 31 DCS/PCS OUT • +33dBm DCS/PCS Output Power |
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RF Micro Devices |
QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE • Reduced Solution Size Integrating Antenna Switch and Harmonic Filtering to Decrease Time to Market • Package 7x8x1.2mm • IEC 61000-4-2 Compliant • In/Output Matched to 50 Ω • DC Block on Antenna Port • GSM850/900 POUT =33.5dBm • DCS/PCS POUT =30.5d |
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Taiwan Semiconductor Company |
20V Dual P-Channel MOSFET ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Block Diagram Part No. TSM9434DCS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual P-Channel MO |
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RF Micro Devices |
DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE GND 1 22 21 20 Applications 3V Dual-Band GSM/GPRS Handsets GSM900/DCS1800 Products GPRS Class 12 Compliant Portable Battery-Powered Equipment CO NF ID EN TI AL :N DA Enhanced Performance Transmit Module No Extern |
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Taiwan Semiconductor Company |
20V Dual N-Channel MOSFET w/ESD Protected ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance ● ESD Protect 2KV Application ● Specially Designed for Li-on Battery Packs ● Battery Switch Application Ordering Information Block Diagram ID (A) 9.4 8 6 4 |
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Sinopower Semiconductor |
P-Channel Enhancement Mode MOSFET |
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RFM |
10-Terminal Ceramic |
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Taiwan Semiconductor |
60V N-Channel Power MOSFET ol VDS VGS ID IDM EAS IAS PD TJ TSTG IPAK 25 0.2 N-Channel MOSFET Limit DPAK 60 ±20 11 7 44 25 7 25 0.2 150 -55 to +150 SOT-223 1.79 0.014 Unit V V A A A mJ A W W/°C °C °C 1/8 Version: B14 TSM900N06 60V N-Channel Power MOSFET Thermal Performa |
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Taiwan Semiconductor |
N-Channel Power MOSFET ● 100% avalanche tested ● Low gate charge for fast switching ● Pb-free plating ● RoHS compliant ● Halogen-free mold compound APPLICATION ● Networking ● Load Switching ● LED Lighting Control ● AC-DC Secondary Rectification TO-251S (IPAK SL) KEY PERFO |
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Desde 2024. D4U Semiconductor.
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