| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
2SA940 ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakd |
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SILAN MICROELECTRONICS |
RF AMPLIFIER FOR DIGITAL SERVO SYSTEM * RF amplitude automatic adjustment circuit .(It is adaptive for CD- SOP-16-225-1.27 A/V,CD-R,CD-R/W,CD-ROM) * Low power consumption.(35mW ~ 3.5V) * ALPC circuit * Operating voltage range:2.8V –7.0V APPLICATIONS ORDERING INFORMATION Device P |
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Toshiba Semiconductor |
2SA949 |
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Toshiba Semiconductor |
2SA965 |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Audio Power Amplifier • Complement to KSC2328A • 3 W Output Application Ordering Information Part Number KSA928AOTA KSA928AYTA Top Mark A928A OA928A Y- 1 TO-92L 1. Emitter 2. Collector 3. Base Package TO-92 3L TO-92 3L Packing Method Ammo Ammo |
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Toshiba Semiconductor |
TRANSISTOR IC = -100 mA (Note) hFE (2) VCE (sat) VCE = -1 V, IC = -700 mA IC = -500 mA, IB = -20 mA VBE VCE = -1 V, IC = -10 mA fT VCE = -5 V, IC = -10 mA Cob VCB = -10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 Min Typ. Max |
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Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“H |
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Micro Electronics |
2SA928 |
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MIC |
AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS |
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Panasonic Semiconductor |
Silicon PNP Transistor |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • Audio Power Amplifier • Driver Stage Amplifier • Complement to KSC2316 1 TO-92L 1. Emitter 2. Collector 3. Base Ordering Information Part Number KSA916YTA Top Mark A916 Package TO-92 3L Packing Method Ammo Absolute Maximum Ratings Stresses e |
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Toshiba Semiconductor |
STEPPING MOTOR DRIVER IC (TA8528 + 2SA950 x 4 MCP) |
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Inchange Semiconductor |
POWER TRANSISTOR ollector-Emitter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V |
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SILAN MICROELECTRONICS |
RF AMPLIFIER FOR DIGITAL SERVO SYSTEM * RF amplitude automatic adjustment circuit (It is adaptive for CDA/V, CD-R, CD-R/W, CD-ROM) * RF system equalizer * Automatic laser power control circuit(ALPC) * Operating voltage range (3V -7V), power consumption (150mW @5V) SOP-20-300-1.27 ORDER |
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Silan Microelectronics |
SINGLE STANDARD VIF-PLL DEMODULATOR AND FM-PLL DETECTOR ∗ Suitable for negative vision modulation ∗ Applicable for IF frequencies of 38.9, 45.75 and 58.75 MHz ∗ Gain controlled wide-band Vision Intermediate Frequency (VIF) amplifier (AC-coupled) ∗ True synchronous demodulation with active carrier re |
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MIC |
AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS |
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Toshiba Semiconductor |
TRANSISTOR within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test |
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Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor , IC= -1mA VCB= -30V, IE=0, f=1MHz VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 50 150 200 -0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 -0.3 V V MHz pF mV Units nA µA nA hFE2 Classification Classi |
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National Semiconductor |
PNP High Voltage Amplifier |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
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Desde 2024. D4U Semiconductor.
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