| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
2SA1013 ignificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han |
|
|
|
|
Toshiba Semiconductor |
2SA1837 EB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz Min Typ. Max Unit ― ― −1.0 µA ― ― −1.0 µA −230 ― ― V 100 ― 320 ― ― −1. |
|
|
|
|
Toshiba Semiconductor |
2SA1930 opriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2007-06-15 ht |
|
|
|
|
Inchange Semiconductor |
POWER TRANSISTOR ollector-Emitter Voltage Breakdown IC= -25mA ; IB= 0 Saturation IC= -5.0A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance |
|
|
|
|
Inchange Semiconductor |
POWER TRANSISTOR DITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -230 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -7A; VCE= -5V -1.5 V ICBO Colle |
|
|
|
|
Inchange Semiconductor |
POWER TRANSISTOR Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A VCE(sa |
|
|
|
|
Toshiba Semiconductor |
2SA1941 c.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. relia |
|
|
|
|
Sanyo Semicon Device |
2SA1207 · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of h FE and small C ob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Sp |
|
|
|
|
Toshiba Semiconductor |
2SA1048 the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“De |
|
|
|
|
Toshiba Semiconductor |
Silicon NPN TRANSISTOR cause this product to decrease in the reliability significantly Weight: 0.21 g (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab |
|
|
|
|
Toshiba Semiconductor |
2SA1160 gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the |
|
|
|
|
Inchange Semiconductor |
POWER TRANSISTOR age IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -5A; VCE= -4V hFE Classifications O P Y 50-100 70-140 90-180 2SA1215 MIN TYP. MAX UNIT -160 |
|
|
|
|
Toshiba Semiconductor |
2SA1263 . Complementary to 2SC3180 . Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collec |
|
|
|
|
Silan Microelectronics |
5-CH CD PLAYER OPU DRIVER * Wide dynamic range (4.0V (Typ.) when VCC = 8V, PVCC =5V, and RL = 8Ω). * Level shift circuit on chip. HSOP - 28-375-0.8 * Thermal shutdown circuit on chip. * Mute mode built-in. * Two regulator controllers built-in. * Five drivers build-in: d |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR viewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) |
|
|
|
|
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor • High Current Capability: IC = -17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5200/FJL4315. • Full the |
|
|
|
|
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor 5 320 –0.8 –0.2 — 4.0 V V MHz pF Unit V V V µA µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCB = |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR |
|
|
|
|
Allegro Micro Systems |
2SA1695 Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –10 –4 00 mA V CE ( sat ) – I B Characteristics (Typical) –3 Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V BE Temperature Characteristics (Typical) –10 (V C |
|
|
|
|
Inchange Semiconductor |
POWER TRANSISTOR ge IC= -5A; IB= -0.5A B -0.5 V ICBO Collector Cutoff Current VCB= -140V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -10 μA hFE DC Current Gain IC= -3A ; VCE= -4V 50 180 COB Output Capacitance IE= 0 ; VCB= -10V;f= 1 |
|
Desde 2024. D4U Semiconductor.
|