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Thinki Semiconductor |
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low therm |
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Microsemi |
Schottky Barrier Rectifiers and benefits • Plastic package with UL 94V-0 flammability classification • Flame retardant epoxy molding component • Guardring for overvoltage protection • Low power loss, high efficiency • RoHS compliant (2002/95/EC) 2 12 3 1 3 TO-220AB 2 Des |
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EIC discrete Semiconductors |
HIGH EFFICIENT RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. |
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ON Semiconductor |
Power Rectifiers http://onsemi.com • • • • • • • • • Ultrafast 35 and 60 Nanosecond Recovery Time 175°C Operating Junction Temperature High Voltage Capability to 600 V Low Forward Drop Low Leakage Specified @ 150°C Case Temperature Current Derating Specified @ Both |
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Rectron Semiconductor |
HIGH EFFICIENCY RECTIFIER * Low power loss,high efficiency * Low leakage * Low forward voltage drop * High current capability * High speed switching * High reliability * High current surge DO-201AD MECHANICAL DATA * Epoxy: Device has UL flammability classification 94V-O * C |
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Siemens Semiconductor Group |
SILICON MINIATURE THYRISTOR |
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EIC discrete Semiconductors |
HIGH EFFICIENT RECTIFIER DIODES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency HIGH EFFICIENT RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. |
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Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 612 |
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Digitron Semiconductors |
30 A SCHOTTKY RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive rev |
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ON Semiconductor |
(MUR3020WT / MUR3060WT) Power Rectifiers http://onsemi.com • • • • • • • • • • Ultrafast 35 and 60 Nanosecond Recovery Time 175°C Operating Junction Temperature Popular TO−247 Package High Voltage Capability to 600 V Low Forward Drop Low Leakage Specified @ 150°C Case Temperature Current |
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Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL D |
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Micross |
HYBRID-HIGH RELIABILITY RADIATION HARDENED DC-DC CONVERTER Total Dose > 200 kRads(Si) Typically usable to 300 kRads(Si) SEE Hardened to LET up to 82 MeV ·cm2/mg Internal EMI filter; Converter is capable of meeting MIL-STD-461C CE03 Low Weight < 100 grams Magnetically Coupled Feedback 18V to 50V DC |
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MIC |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER ▪ High surge current capability ▪ Cases: Molded plastic ■ APPLICATIONS ▪ Rectifier ■ Outline Dimensions and Mark TO-3P/TO-247AD .245(6.2) .225(5.7) .645(16.4) .625(15.9) .323(8.2) .313(7.9) .078(1.98) .203(5.16) .193(4.90) .840(21.3) .820(20. |
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Digitron Semiconductors |
30A ULTRA FAST RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS. Rating Peak repetitive re |
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Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL D |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheel |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu |
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Fairchild Semiconductor |
30A 600V Stealth Diode • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . |
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Microsemi Corporation |
RECTIFIERS ASSEMBLIES |
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Dynex Semiconductor |
Phase Control Thyristor Double Side Cooling High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 3030A 40600A 1500V/µs 400A/µs APPLICATIONS High Power Drives High Voltage Power Supplies Static Switches * Higher dV/dt selections available VO |
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Desde 2024. D4U Semiconductor.
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