No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Diotec Semiconductor |
Silicon Rectifiers riodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungs |
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General Semiconductor |
SOFT RECOVERY FAST SWITCHING PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Fast switching for high efficiency ♦ High forward current operation at TL=45°C ♦ Construction utilizes void-free molded plastic techniqu |
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General Semiconductor |
SOFT RECOVERY FAST SWITCHING PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Fast switching for high efficiency ♦ High forward current operation at TL=45°C ♦ Construction utilizes void-free molded plastic techniqu |
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Diotec Semiconductor |
Fast Silicon Rectifiers ast Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemp |
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EIC discrete Semiconductors |
SILICON RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 0.21 (5.33) 0.19 (4.83) 1.00 (25.4) MIN. 0.375 (9.53) 0.285 (7.24) MECHANICAL DAT |
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Diotec Semiconductor |
Silicon Rectifiers riodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungs |
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EIC discrete Semiconductors |
SILICON RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 0.21 (5.33) 0.19 (4.83) 1.00 (25.4) MIN. 0.375 (9.53) 0.285 (7.24) MECHANICAL DAT |
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Diotec Semiconductor |
Silicon Rectifiers riodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungs |
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Diotec Semiconductor |
Fast Silicon Rectifiers ast Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemp |
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Diotec Semiconductor |
Fast Silicon Rectifiers ast Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemp |
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Diotec Semiconductor |
Fast Silicon Rectifiers ast Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemp |
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|
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General Semiconductor |
SOFT RECOVERY FAST SWITCHING PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Fast switching for high efficiency ♦ High forward current operation at TL=45°C ♦ Construction utilizes void-free molded plastic techniqu |
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Diotec Semiconductor |
Silicon Rectifiers riodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungs |
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Diotec Semiconductor |
Silicon Rectifiers riodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungs |
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MIC |
SOFT RECOVERY FAST SWITCHING RECTIFIER ▪ /RZFRVWFRQVWUXFWLRQ ▪ )DVWVZLWFKLQJIRUKLJKHIILFHQF\ ▪ /RZUHYHUVHOHDNDJH ▪ +LJKIRUZDUGVXUJHFXUUHQWFDSDELOLW\ ▪ +LJKWHPSHUDWXUHVROGHULQJJXDUDQWHHG VHFRGV´PPOHDGOHQJWKDWOEVNJWHQVLRQ MECHANICAL DATA ▪ &DVH |
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EIC discrete Semiconductors |
SILICON RECTIFIER DIODES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 0.21 (5.33) 0.19 (4.83) 1.00 (25.4) MIN. 0.375 (9.53) 0.285 (7.24) MECHANICAL DAT |
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Diotec Semiconductor |
Silicon Rectifiers riodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungs |
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General Semiconductor |
SOFT RECOVERY FAST SWITCHING PLASTIC RECTIFIER ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High surge current capability ♦ Fast switching for high efficiency ♦ High forward current operation at TL=45°C ♦ Construction utilizes void-free molded plastic techniqu |
|
|
|
Diotec Semiconductor |
Fast Silicon Rectifiers ast Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemp |
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Diotec Semiconductor |
Fast Silicon Rectifiers ast Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemp |
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