| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Microsemi |
Schottky Barrier Rectifiers and benefits • Plastic package with UL 94V-0 flammability classification • Flame retardant epoxy molding component • Guardring for overvoltage protection • Low power loss, high efficiency • RoHS compliant (2002/95/EC) 2 12 3 1 3 TO-220AB 2 Des |
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Siemens Semiconductor Group |
SILICON MINIATURE THYRISTOR |
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EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength SILICON BRIDGE RECTIFIERS BR50W 0.732 (18.6) 0.692 (17.5) 1.130 (28.7) 1.120 (28.4) 0.4 |
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Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 612 |
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Digitron Semiconductors |
30 A SCHOTTKY RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive rev |
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American First Semiconductor |
3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax |
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American First Semiconductor |
3.0A Leaded Type Schottky Barrier Rectifiers • Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitax |
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Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL D |
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MIC |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER ▪ High surge current capability ▪ Cases: Molded plastic ■ APPLICATIONS ▪ Rectifier ■ Outline Dimensions and Mark TO-3P/TO-247AD .245(6.2) .225(5.7) .645(16.4) .625(15.9) .323(8.2) .313(7.9) .078(1.98) .203(5.16) .193(4.90) .840(21.3) .820(20. |
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Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL D |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·High Surge Capacity ·Guarding for Overvoltage protection ·For Use in Low Voltage, High Frequency Inverters, Free Wheel |
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Inchange Semiconductor |
Schottky Barrier Rectifier ·Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu |
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Rectron Semiconductor |
SINGLE-PHASE SILICON BRIDGE RECTIFIER * Surge overloab rating: 50 amperes peak * Low forward voltage drop * Small size: simple installation * Silver-plated copper leads * Mounting position: Any * Mounting: Hole thru for # 6 screw * Weight: 3.36 grams MECHANICAL DATA * UL listed the recog |
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Digitron Semiconductors |
3 AMP SCHOTTKY RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive rev |
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ON Semiconductor |
Axial Lead Rectifiers epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features Extremely Low vF Low Power Loss |
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Taiwan Semiconductor |
Schottky Barrier Rectifiers Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low vol |
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Cypress Semiconductor |
Proximity Sensors an advanced analog sensing channel and the Capacitive Sigma Delta PLUS (CSD PLUS) sensing algorithm, which delivers a signal-to-noise ratio (SNR) of greater than 100:1 to ensure touch accuracy even in extremely noisy environments. These controllers a |
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STMicroelectronics |
High voltage rectifier • Ultra low conduction losses • Ultra-low reverse losses • High junction temperature capability (+175 °C) • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant (DO-247) Applications • SMPS • Bridge De |
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STMicroelectronics |
Automotive high voltage rectifier • AEC-Q101 qualified • Ultra low conduction losses • Ultra-low reverse losses • High junction temperature capability (+175 °C) • VRRM guaranteed from -40 to +175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • P |
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STMicroelectronics |
30A bridge rectifier diode • AEC-Q101 qualified • Ultra low conduction losses • Ultra-low reverse losses • High junction temperature capability (+175 °C) • VRRM guaranteed from -40 to +175 °C • D2PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • P |
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Desde 2024. D4U Semiconductor.
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