No. | parte # | Fabricante | Descripción | Hoja de Datos |
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SG Micro |
3A Single-Cell Battery Charger ● High Efficiency, 1.5MHz, Synchronous Buck Charger 93% Charge Efficiency at 1A from 5V Input 91% Charge Efficiency at 2A from 5V Input Optimized for USB Voltage Input (5V) Selectable PFM Mode for Light Load Efficiency ● USB On-The-Go (OTG) S |
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BYD Microelectronics |
3/4/5 Cell Battery Protectors (1) High-accuracy voltage detection for each cell ·overcharge threshold 3.6V~4.6V accuracy: ±25 mV (+25℃) accuracy: ±40 mV (-40℃ to +85℃) ·overcharge hysteresis 0.1V accuracy: ±50 mV ·over-discharge threshold 1.6V~3.0V accuracy: ±80 mV ·o |
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EGmicro |
Three-stage lead-acid battery charge management chip 5 4.1. ............................................................................................................................................. 5 4.2. ........................................................................................... |
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Sino Wealth Microelectronic |
Series Lithium Battery Pack Protection |
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Microne |
1A Lithium Ion Battery Linear Charger include Battery temperature monitor, under-voltage lockout, automatic recharge and two status pins to indicate charge and charge termination. Features ●Protection of battery cell reverse connection ● Programmable charge current up to 1A ●No MOSFET |
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Sino Wealth Microelectronic |
lithium battery Pack protection |
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Sino Wealth Microelectronic |
Series Lithium Battery Pack Protection |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K NC A NC K A K2 K1 A K2 A K1 BAT54W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD pack |
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Fairchild Semiconductor |
Schottky Diodes |
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AiT Semiconductor |
LINEAR LI-ION BATTERY CHARGER Double lithium battery charge management Only need a few external components Pre-charge, constant current charging , constant voltage charging mode Temperature detection Two charging status Available in SOP8 Package APPLICATION Digital |
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ON Semiconductor |
Schottky Diodes only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width = 1.0 second 30 V 20 |
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O2Micro |
5 Cell Li-Ion/Polymer Battery Pack Protection IC High Accuracy Voltage Detection ¾ Over voltage threshold range - VOVP: 3.6~4.35V; ±25 mV - Hysteresis Voltage: 0V, 0.1~0.275V ¾ Under voltage threshold range - VUVP: 2.0~3.0V; ±80 mV - Hysteresis Voltage: 0~1.0V Three-level High Accuracy Over-Cur |
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SPMICRO |
High-precision single-cell lithium battery constant current / constant voltage linear charge and discharge controller Vm VDD=3.0V VDD=1.8V,Vm=0V VDD=3.9V, ICOUT=10uA VDD=2.0V, ICOUT=10uA VDD=3.9V, ICOUT=10uA VDD=3.9V VDD=2.0V VOCTYP -0.05 VOCTYP -0.08 VOCRTYP-0.05 VOCRTYP-0.08 VODRTYP-0.075 VODRTYP-0.105 0.7×TOCTYP VODRTYP-0.075 VODRTYP-0.105 0.7×TODTYP VEDITYP |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K NC A NC K A K2 K1 A K2 A K1 BAT54W DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD pack |
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Sino Wealth Microelectronic |
Battery Protection |
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General Semiconductor |
Schottky Diodes SOD-123 .022 (0.55) ♦ For general purpose applications ♦ These diodes feature very low turnon voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. case with |
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General Semiconductor |
Schottky Diodes ♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN 1 2 max. .004 (0.1) junction guard ring against excessive voltage, such as electrostatic discharges. .007 |
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National Semiconductor |
Universal Battery Charger |
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STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE = 25°C T amb = 25°C Test Conditions VR = 1V IF = 20mA f = 1GHz f = 1MHz Krakauer Method 6 Min. Typ. Max. 1.1 100 7 Unit pF ps dB (1) Pulse test: tp ≤ 300µs δ < 2%. (2) Noise figure test : - diode is inserted in a tuned stripline circuit - local osci |
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STMicroelectronics |
Small signal Schottky diodes Low conduction and reverse losses Negligible switching losses Low forward and reverse recovery times Extremely fast switching Surface mount device Low capacitance diode ECOPACK®2 compliant component Description The BAT54 series uses 40 |
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