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MATRIX MICROTECH |
P-Channel Enhancement Mode MOSFET APPLICATIONS ¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell design for extremely low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ SOT-23-3L package desi |
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Matrix Microtech |
N-Channel MOSFET RDS(ON) =150mΩ @ VGS = 10V RDS(ON) =175mΩ @ VGS = 5V APPLICATIONS Management ¾ 100V/10A, ¾ 100V/10A, ¾ ¾ ¾ ¾ POWER ¾ Port ¾ DC/ ¾ Load ¾ DSC able Equipment DC Converter Switch Super high density cell design for extremely ultra low RDS(ON) Exc |
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Matrix Microtech |
P-Channel MOSFET ¾ -100V/-10A, RDS(ON) =205mΩ @ VGS = -10V ¾ -100V/-10A, RDS(ON) =225mΩ @ VGS = -7V ¾ Super high density cell design for extremely ultra low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ TO-252 package design PIN CONFIGURAT |
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Desde 2024. D4U Semiconductor.
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